Characterization of dielectric films and damage threshold at 1.064 μm

Research output: Contribution to journalArticleResearchpeer review

Authors

  • S. M.J. Akhtar
  • Detlev Ristau
  • Jürgen Ebert
  • Herbert Welling

Research Organisations

External Research Organisations

  • Pakistan Institute of Nuclear Science and Technology
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Details

Original languageEnglish
Pages (from-to)191-198
Number of pages8
JournalPhysica Status Solidi (A) Applied Research
Volume115
Issue number1
Publication statusPublished - 16 Sept 1989

Abstract

A study on thin film optical materials is presented. Single layers of oxides, fluorides, and mixtures of various dielectrics are fabricated on suprasil substrates. Optimized parameters are used for deposition of each material. Optical characteristics of dielectric materials are determined. A Nd‐YAG laser with a maximum output energy of 250 mJ and pulse duration of 14 ns (FWHM) is used for damage experiments. X‐ray diffraction analysis of various dielectric materials for bulk and film specimen is also presented. Morphology of damage sites is done by Nomarsky and scanning electron microscopy.

ASJC Scopus subject areas

Cite this

Characterization of dielectric films and damage threshold at 1.064 μm. / Akhtar, S. M.J.; Ristau, Detlev; Ebert, Jürgen et al.
In: Physica Status Solidi (A) Applied Research, Vol. 115, No. 1, 16.09.1989, p. 191-198.

Research output: Contribution to journalArticleResearchpeer review

Akhtar SMJ, Ristau D, Ebert J, Welling H. Characterization of dielectric films and damage threshold at 1.064 μm. Physica Status Solidi (A) Applied Research. 1989 Sept 16;115(1):191-198. doi: 10.1002/pssa.2211150120
Akhtar, S. M.J. ; Ristau, Detlev ; Ebert, Jürgen et al. / Characterization of dielectric films and damage threshold at 1.064 μm. In: Physica Status Solidi (A) Applied Research. 1989 ; Vol. 115, No. 1. pp. 191-198.
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