Details
| Original language | English |
|---|---|
| Pages (from-to) | 2115-2118 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 24 |
| Issue number | 4 |
| Publication status | Published - 26 Jul 2006 |
Abstract
We have investigated the growth and electrical properties of crystalline Gd2O3 directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure are formed. Further growth resulted in the formation of flat layers in a mixture of cubic bixbyite in [111] orientation and monoclinic structure. The fabricated capacitors exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε=22, a leakage current of 10-8 A/cm2 at. 1 V and breakdown fields >4.3 MV/cm for layers with 14 nm thickness. These properties make Gd2O 3 interesting for high-K application on SiC.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 4, 26.07.2006, p. 2115-2118.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide
AU - Fissel, A.
AU - Czernohorsky, M.
AU - Osten, H. J.
PY - 2006/7/26
Y1 - 2006/7/26
N2 - We have investigated the growth and electrical properties of crystalline Gd2O3 directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure are formed. Further growth resulted in the formation of flat layers in a mixture of cubic bixbyite in [111] orientation and monoclinic structure. The fabricated capacitors exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε=22, a leakage current of 10-8 A/cm2 at. 1 V and breakdown fields >4.3 MV/cm for layers with 14 nm thickness. These properties make Gd2O 3 interesting for high-K application on SiC.
AB - We have investigated the growth and electrical properties of crystalline Gd2O3 directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure are formed. Further growth resulted in the formation of flat layers in a mixture of cubic bixbyite in [111] orientation and monoclinic structure. The fabricated capacitors exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε=22, a leakage current of 10-8 A/cm2 at. 1 V and breakdown fields >4.3 MV/cm for layers with 14 nm thickness. These properties make Gd2O 3 interesting for high-K application on SiC.
UR - http://www.scopus.com/inward/record.url?scp=33746531190&partnerID=8YFLogxK
U2 - 10.1116/1.2214702
DO - 10.1116/1.2214702
M3 - Article
AN - SCOPUS:33746531190
VL - 24
SP - 2115
EP - 2118
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -