Characterization of asymmetric coupled CMOS lines

Research output: Contribution to journal › Article › Research › peer review

Authors

  • Uwe Arz
  • Dylan F. Williams
  • David K. Walker
  • Janet E. Rogers
  • Markus Rudack
  • Dieter Treytnar
  • Hartmut Grabinski

Research Organisations

External Research Organisations

  • National Institute of Standards and Technology (NIST)
View graph of relations

Details

Original languageEnglish
Pages (from-to)609-612
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 2000

Abstract

This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.

ASJC Scopus subject areas

Cite this

Characterization of asymmetric coupled CMOS lines. / Arz, Uwe; Williams, Dylan F.; Walker, David K. et al.
In: IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 2000, p. 609-612.

Research output: Contribution to journal › Article › Research › peer review

Arz, U, Williams, DF, Walker, DK, Rogers, JE, Rudack, M, Treytnar, D & Grabinski, H 2000, 'Characterization of asymmetric coupled CMOS lines', IEEE MTT-S International Microwave Symposium Digest, vol. 2, pp. 609-612. https://doi.org/10.1109/MWSYM.2000.863258
Arz, U., Williams, D. F., Walker, D. K., Rogers, J. E., Rudack, M., Treytnar, D., & Grabinski, H. (2000). Characterization of asymmetric coupled CMOS lines. IEEE MTT-S International Microwave Symposium Digest, 2, 609-612. https://doi.org/10.1109/MWSYM.2000.863258
Arz U, Williams DF, Walker DK, Rogers JE, Rudack M, Treytnar D et al. Characterization of asymmetric coupled CMOS lines. IEEE MTT-S International Microwave Symposium Digest. 2000;2:609-612. doi: 10.1109/MWSYM.2000.863258
Arz, Uwe ; Williams, Dylan F. ; Walker, David K. et al. / Characterization of asymmetric coupled CMOS lines. In: IEEE MTT-S International Microwave Symposium Digest. 2000 ; Vol. 2. pp. 609-612.
Download
@article{b05cb02099e145ab9e78a60bf50bf1f9,
title = "Characterization of asymmetric coupled CMOS lines",
abstract = "This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.",
author = "Uwe Arz and Williams, {Dylan F.} and Walker, {David K.} and Rogers, {Janet E.} and Markus Rudack and Dieter Treytnar and Hartmut Grabinski",
year = "2000",
doi = "10.1109/MWSYM.2000.863258",
language = "English",
volume = "2",
pages = "609--612",

}

Download

TY - JOUR

T1 - Characterization of asymmetric coupled CMOS lines

AU - Arz, Uwe

AU - Williams, Dylan F.

AU - Walker, David K.

AU - Rogers, Janet E.

AU - Rudack, Markus

AU - Treytnar, Dieter

AU - Grabinski, Hartmut

PY - 2000

Y1 - 2000

N2 - This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.

AB - This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.

UR - http://www.scopus.com/inward/record.url?scp=0033694263&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2000.863258

DO - 10.1109/MWSYM.2000.863258

M3 - Article

AN - SCOPUS:0033694263

VL - 2

SP - 609

EP - 612

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -