Details
| Original language | English |
|---|---|
| Title of host publication | 2012 IEEE Vehicle Power and Propulsion Conference |
| Subtitle of host publication | VPPC 2012 |
| Pages | 647-652 |
| Number of pages | 6 |
| Publication status | Published - 5 May 2014 |
| Event | 2012 IEEE Vehicle Power and Propulsion Conference, VPPC 2012 - Seoul, Korea, Republic of Duration: 9 Oct 2012 → 12 Oct 2012 |
Abstract
Silicon Carbide (SiC) based Power Semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature and system power density. This paper presents a comparison of Silicon (Si) and SiC device technologies for the use in hybrid electric vehicle (HEV) traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modelling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situtations, leading to an improved estimation of the benefit which can be expected from Systems utilizing SiC technology.
ASJC Scopus subject areas
- Engineering(all)
- Automotive Engineering
- Engineering(all)
- Mechanical Engineering
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2012 IEEE Vehicle Power and Propulsion Conference: VPPC 2012. 2014. p. 647-652 6422637.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices
AU - Merkert, Arvid
AU - Krone, Tobias
AU - Mertens, Axel
PY - 2014/5/5
Y1 - 2014/5/5
N2 - Silicon Carbide (SiC) based Power Semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature and system power density. This paper presents a comparison of Silicon (Si) and SiC device technologies for the use in hybrid electric vehicle (HEV) traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modelling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situtations, leading to an improved estimation of the benefit which can be expected from Systems utilizing SiC technology.
AB - Silicon Carbide (SiC) based Power Semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature and system power density. This paper presents a comparison of Silicon (Si) and SiC device technologies for the use in hybrid electric vehicle (HEV) traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modelling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situtations, leading to an improved estimation of the benefit which can be expected from Systems utilizing SiC technology.
UR - http://www.scopus.com/inward/record.url?scp=84874413697&partnerID=8YFLogxK
U2 - 10.1109/VPPC.2012.6422637
DO - 10.1109/VPPC.2012.6422637
M3 - Conference contribution
AN - SCOPUS:84874413697
SN - 9781467309530
SP - 647
EP - 652
BT - 2012 IEEE Vehicle Power and Propulsion Conference
T2 - 2012 IEEE Vehicle Power and Propulsion Conference, VPPC 2012
Y2 - 9 October 2012 through 12 October 2012
ER -