Details
| Original language | English |
|---|---|
| Title of host publication | 2023 IEEE 36th International Vacuum Nanoelectronics Conference |
| Subtitle of host publication | IVNC |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 14-16 |
| Number of pages | 3 |
| ISBN (electronic) | 9798350301434 |
| ISBN (print) | 979-8-3503-0144-1 |
| Publication status | Published - 2023 |
| Event | 36th IEEE International Vacuum Nanoelectronics Conference 2023 - Cambridge, United States Duration: 10 Jul 2023 → 13 Jul 2023 |
Publication series
| Name | International Vacuum Nanoelectronics Conference |
|---|---|
| ISSN (Print) | 2164-2370 |
| ISSN (electronic) | 2380-6311 |
Abstract
In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.
Keywords
- atmospheric pressure, carbon, chemical analytics, Electron emitter, graphene-oxide-semiconductor
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Instrumentation
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2023 IEEE 36th International Vacuum Nanoelectronics Conference: IVNC. Institute of Electrical and Electronics Engineers Inc., 2023. p. 14-16 ( International Vacuum Nanoelectronics Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels
AU - Herdl, Florian
AU - Kueddelsmann, Maximillian J.
AU - Schels, Andreas
AU - Bachmann, Michael
AU - Edler, Simon
AU - Wohlfartsstatter, Dominik
AU - Dusberg, Felix
AU - Prugger, Alexander
AU - Dillig, Michael
AU - Dams, Florian
AU - Schreiner, Rupert
AU - Coileain, Cormac O.
AU - Zimmermann, Stefan
AU - Pahlke, Andreas
AU - Duesberg, Georg S.
N1 - Funding Information: This Project is supported by the Federal Ministry for Economic Affairs and Climate Action (BMWK) on the basis of a decision by the German Bundestag. (KK5037601BS0)
PY - 2023
Y1 - 2023
N2 - In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.
AB - In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.
KW - atmospheric pressure
KW - carbon
KW - chemical analytics
KW - Electron emitter
KW - graphene-oxide-semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85168680152&partnerID=8YFLogxK
U2 - 10.1109/IVNC57695.2023.10188974
DO - 10.1109/IVNC57695.2023.10188974
M3 - Conference contribution
AN - SCOPUS:85168680152
SN - 979-8-3503-0144-1
T3 - International Vacuum Nanoelectronics Conference
SP - 14
EP - 16
BT - 2023 IEEE 36th International Vacuum Nanoelectronics Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th IEEE International Vacuum Nanoelectronics Conference 2023
Y2 - 10 July 2023 through 13 July 2023
ER -