Details
Original language | English |
---|---|
Pages (from-to) | 299-301 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 11 |
Issue number | 7 |
Publication status | Published - Jul 2001 |
Abstract
The error caused by parasitic inductance in the characteristic impedance measured by the calibration-comparison method on lossy silicon substrates was examined. The examination showed that the error of the calibration-comparison method due to parasitic inductance was very small. It was indicated that the errors of the calibration-comparison method due to pad inductance and capacitance can be made small with careful designing.
Keywords
- Characteristic impedance, Measurement, Silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Microwave and Wireless Components Letters, Vol. 11, No. 7, 07.2001, p. 299-301.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Characteristic-impedance measurement error on lossy substrates
AU - Williams, Dylan F.
AU - Arz, Uwe
AU - Grabinski, Hartmut
PY - 2001/7
Y1 - 2001/7
N2 - The error caused by parasitic inductance in the characteristic impedance measured by the calibration-comparison method on lossy silicon substrates was examined. The examination showed that the error of the calibration-comparison method due to parasitic inductance was very small. It was indicated that the errors of the calibration-comparison method due to pad inductance and capacitance can be made small with careful designing.
AB - The error caused by parasitic inductance in the characteristic impedance measured by the calibration-comparison method on lossy silicon substrates was examined. The examination showed that the error of the calibration-comparison method due to parasitic inductance was very small. It was indicated that the errors of the calibration-comparison method due to pad inductance and capacitance can be made small with careful designing.
KW - Characteristic impedance
KW - Measurement
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0035401727&partnerID=8YFLogxK
U2 - 10.1109/7260.933777
DO - 10.1109/7260.933777
M3 - Article
AN - SCOPUS:0035401727
VL - 11
SP - 299
EP - 301
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 7
ER -