Details
| Original language | English |
|---|---|
| Pages (from-to) | 17-23 |
| Number of pages | 7 |
| Journal | Key Engineering Materials |
| Volume | 806 |
| Publication status | Published - 11 Jun 2019 |
Abstract
In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.
Keywords
- Chaotic potential, Degenerated semiconductor, GaAs, Semiconductor surface
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Key Engineering Materials, Vol. 806, 11.06.2019, p. 17-23.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Chaotic potential on the degenerated semiconductor surface
AU - Bondarenko, Vyacheslav B.
AU - Davydov, Sergey N.
AU - Nacke, Bernard
AU - Filimonov, Alexey V.
N1 - Funding information: This work was performed under the government order of the Ministry of Education and Science of RF project # 11.5861.2017. B. Nacke and A. Filimonov would like to thank the DAAD Grant “Scientific Partnership with St. Petersburg State Polytechnic University and Leibniz Universität Hannover”.
PY - 2019/6/11
Y1 - 2019/6/11
N2 - In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.
AB - In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.
KW - Chaotic potential
KW - Degenerated semiconductor
KW - GaAs
KW - Semiconductor surface
UR - http://www.scopus.com/inward/record.url?scp=85067295222&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.806.17
DO - 10.4028/www.scientific.net/KEM.806.17
M3 - Article
AN - SCOPUS:85067295222
VL - 806
SP - 17
EP - 23
JO - Key Engineering Materials
JF - Key Engineering Materials
SN - 1013-9826
ER -