Details
| Original language | English |
|---|---|
| Article number | 111297 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 231 |
| Early online date | 29 Jul 2021 |
| Publication status | Published - Oct 2021 |
Abstract
We determined the density of defect states of poly-Si/SiOx/c-Si junctions featuring a wet chemical interfacial oxide from lifetime measurements using the MarcoPOLO model to calculate recombination and contact resistance in poly-Si/SiOx/c-Si-junctions. In samples that did not receive any hydrogen treatment, the Dit,cSi is about 2 × 1012 cm−2 eV⁻1 before firing and rises to 3–7 × 1012 cm⁻2 eV⁻1 during firing at measured peak temperatures between 620 °C and 863 °C. To address the question of why AlOx/SiNy stacks in contrast to pure SiNy layers for hydrogenation during firing provides better passivation quality, we have measured the hydrogen concentrations at the poly-Si/SiOx/c-Si interface as a function of AlOx layer thickness and compared these to J0 and calculated Dit,c-Si values. We observe an increase of the hydrogen concentration at the SiOx/c-Si interface upon firing as a function of the firing temperature that exceeds the defect concentrations at the interface several times. However, the AlOx layer thickness appears to cause an increase in hydrogen concentration at the SiOx/c-Si interface in these samples rather than exhibiting a hydrogen blocking property.
Keywords
- Firing, Hydrogen, MarcoPOLO, Modeling, Passivating contacts, POLO
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 231, 111297, 10.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Changes in hydrogen concentration and defect state density at the poly-Si/SiOx/c-Si interface due to firing
AU - Hollemann, Christina
AU - Folchert, Nils
AU - Harvey, Steven P.
AU - Stradins, Paul
AU - Young, David L.
AU - Salles de Souza, Caroline Lima
AU - Rienäcker, Michael
AU - Haase, Felix
AU - Brendel, Rolf
AU - Peibst, Robby
N1 - Funding Information: The authors thank the Federal Ministry for Economic Affairs and Energy (BMWi) and the state of Lower Saxony for funding this work, Hilke Fischer, Annika Raugewitz, Anja Christ (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from the Institute of Electronic Materials and Devices) for sample processing and Martin Rudolf and Henning Schulte-Huxel for the FTIR measurement. This work was authored in part by the National Renewable Energy Laboratory, operated by Alliance for Sustainable Energy, LLC, for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. Funding provided by the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes.
PY - 2021/10
Y1 - 2021/10
N2 - We determined the density of defect states of poly-Si/SiOx/c-Si junctions featuring a wet chemical interfacial oxide from lifetime measurements using the MarcoPOLO model to calculate recombination and contact resistance in poly-Si/SiOx/c-Si-junctions. In samples that did not receive any hydrogen treatment, the Dit,cSi is about 2 × 1012 cm−2 eV⁻1 before firing and rises to 3–7 × 1012 cm⁻2 eV⁻1 during firing at measured peak temperatures between 620 °C and 863 °C. To address the question of why AlOx/SiNy stacks in contrast to pure SiNy layers for hydrogenation during firing provides better passivation quality, we have measured the hydrogen concentrations at the poly-Si/SiOx/c-Si interface as a function of AlOx layer thickness and compared these to J0 and calculated Dit,c-Si values. We observe an increase of the hydrogen concentration at the SiOx/c-Si interface upon firing as a function of the firing temperature that exceeds the defect concentrations at the interface several times. However, the AlOx layer thickness appears to cause an increase in hydrogen concentration at the SiOx/c-Si interface in these samples rather than exhibiting a hydrogen blocking property.
AB - We determined the density of defect states of poly-Si/SiOx/c-Si junctions featuring a wet chemical interfacial oxide from lifetime measurements using the MarcoPOLO model to calculate recombination and contact resistance in poly-Si/SiOx/c-Si-junctions. In samples that did not receive any hydrogen treatment, the Dit,cSi is about 2 × 1012 cm−2 eV⁻1 before firing and rises to 3–7 × 1012 cm⁻2 eV⁻1 during firing at measured peak temperatures between 620 °C and 863 °C. To address the question of why AlOx/SiNy stacks in contrast to pure SiNy layers for hydrogenation during firing provides better passivation quality, we have measured the hydrogen concentrations at the poly-Si/SiOx/c-Si interface as a function of AlOx layer thickness and compared these to J0 and calculated Dit,c-Si values. We observe an increase of the hydrogen concentration at the SiOx/c-Si interface upon firing as a function of the firing temperature that exceeds the defect concentrations at the interface several times. However, the AlOx layer thickness appears to cause an increase in hydrogen concentration at the SiOx/c-Si interface in these samples rather than exhibiting a hydrogen blocking property.
KW - Firing
KW - Hydrogen
KW - MarcoPOLO
KW - Modeling
KW - Passivating contacts
KW - POLO
UR - http://www.scopus.com/inward/record.url?scp=85111545101&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2021.111297
DO - 10.1016/j.solmat.2021.111297
M3 - Article
AN - SCOPUS:85111545101
VL - 231
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
M1 - 111297
ER -