Details
| Original language | English |
|---|---|
| Pages (from-to) | 198-203 |
| Number of pages | 6 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 12 |
| Issue number | 1 |
| Publication status | Published - 26 Oct 2021 |
Abstract
We examine the long-term stability of the carrier lifetime in boron-doped Czochralski-grown silicon materials with different boron and oxygen concentrations, which were regenerated in an industrial belt furnace. After firing and subsequent regeneration in an industrial conveyor-belt furnace, the silicon samples are exposed to long-term illumination at an intensity of 0.1 suns and a sample temperature of about 30 °C for more than two years. After regeneration, we observe a minor re-degradation (30–72% reduced compared to the degradation observed without regeneration step). We attribute this re-degradation to a non-completed regeneration within the belt furnace due to the short regeneration period. Our results show that the industrial process consisting of firing with subsequent regeneration in the same unit is very effective for industrially relevant silicon materials. Typical industrial silicon wafers with a resistivity of (1.75 ± 0.03) Ωcm and an interstitial oxygen concentration of (6.9 ± 0.3) × 1017 cm–3 show lifetimes larger than 2 ms after regeneration and two years of light exposure.
Keywords
- Annealing, Belts, Boron–oxygen (BO) defect, Czochralski-grown silicon (Cz-Si), Degradation, Furnaces, Lighting, Sun, Temperature measurement, carrier lifetime, light-induced degradation (LID), long-term stability, regeneration, Boron-oxygen (BO) defect, long-Term stability
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Journal of Photovoltaics, Vol. 12, No. 1, 26.10.2021, p. 198-203.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Carrier Lifetime Stability of Boron-Doped Czochralski-Grown Silicon Materials for Years After Regeneration in an Industrial Belt Furnace
AU - Helmich, Lailah
AU - Walter, Dominic C.
AU - Pernau, Thomas
AU - Schmidt, Jan
PY - 2021/10/26
Y1 - 2021/10/26
N2 - We examine the long-term stability of the carrier lifetime in boron-doped Czochralski-grown silicon materials with different boron and oxygen concentrations, which were regenerated in an industrial belt furnace. After firing and subsequent regeneration in an industrial conveyor-belt furnace, the silicon samples are exposed to long-term illumination at an intensity of 0.1 suns and a sample temperature of about 30 °C for more than two years. After regeneration, we observe a minor re-degradation (30–72% reduced compared to the degradation observed without regeneration step). We attribute this re-degradation to a non-completed regeneration within the belt furnace due to the short regeneration period. Our results show that the industrial process consisting of firing with subsequent regeneration in the same unit is very effective for industrially relevant silicon materials. Typical industrial silicon wafers with a resistivity of (1.75 ± 0.03) Ωcm and an interstitial oxygen concentration of (6.9 ± 0.3) × 1017 cm–3 show lifetimes larger than 2 ms after regeneration and two years of light exposure.
AB - We examine the long-term stability of the carrier lifetime in boron-doped Czochralski-grown silicon materials with different boron and oxygen concentrations, which were regenerated in an industrial belt furnace. After firing and subsequent regeneration in an industrial conveyor-belt furnace, the silicon samples are exposed to long-term illumination at an intensity of 0.1 suns and a sample temperature of about 30 °C for more than two years. After regeneration, we observe a minor re-degradation (30–72% reduced compared to the degradation observed without regeneration step). We attribute this re-degradation to a non-completed regeneration within the belt furnace due to the short regeneration period. Our results show that the industrial process consisting of firing with subsequent regeneration in the same unit is very effective for industrially relevant silicon materials. Typical industrial silicon wafers with a resistivity of (1.75 ± 0.03) Ωcm and an interstitial oxygen concentration of (6.9 ± 0.3) × 1017 cm–3 show lifetimes larger than 2 ms after regeneration and two years of light exposure.
KW - Annealing
KW - Belts
KW - Boron–oxygen (BO) defect
KW - Czochralski-grown silicon (Cz-Si)
KW - Degradation
KW - Furnaces
KW - Lighting
KW - Sun
KW - Temperature measurement
KW - carrier lifetime
KW - light-induced degradation (LID)
KW - long-term stability
KW - regeneration
KW - Boron-oxygen (BO) defect
KW - long-Term stability
UR - http://www.scopus.com/inward/record.url?scp=85118530740&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2021.3116019
DO - 10.1109/jphotov.2021.3116019
M3 - Article
VL - 12
SP - 198
EP - 203
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 1
ER -