Carbon-modified-germanium-epitaxy: Filtering threading dislocations with carbon delta layers

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Original languageEnglish
Pages (from-to)67-70
Number of pages4
JournalECS Transactions
Volume93
Issue number1
Publication statusPublished - 2019
Event2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference - Madison, United States
Duration: 2 Jun 20196 Jun 2019

Abstract

In this work, we report on the filtering of threading dislocations in epitaxial growth of thin Ge layers on Si(001) substrates using carbon delta layers. It has been observed that certain epitaxial conditions can enforce the bending of threading dislocations at the carbon layers. Part of the dislocations form closed loops in the bottom layers resulting in defect-reduced top layers. This approach enables the fabrication of thin dislocation-reduced Ge layers grown on Si(001) substrates.

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Carbon-modified-germanium-epitaxy: Filtering threading dislocations with carbon delta layers. / Bamscheidt, Y.; Osten, Hans-Jörg.
In: ECS Transactions, Vol. 93, No. 1, 2019, p. 67-70.

Research output: Contribution to journalConference articleResearchpeer review

Bamscheidt Y, Osten HJ. Carbon-modified-germanium-epitaxy: Filtering threading dislocations with carbon delta layers. ECS Transactions. 2019;93(1):67-70. doi: 10.1149/09301.0067ecst
Bamscheidt, Y. ; Osten, Hans-Jörg. / Carbon-modified-germanium-epitaxy : Filtering threading dislocations with carbon delta layers. In: ECS Transactions. 2019 ; Vol. 93, No. 1. pp. 67-70.
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abstract = "In this work, we report on the filtering of threading dislocations in epitaxial growth of thin Ge layers on Si(001) substrates using carbon delta layers. It has been observed that certain epitaxial conditions can enforce the bending of threading dislocations at the carbon layers. Part of the dislocations form closed loops in the bottom layers resulting in defect-reduced top layers. This approach enables the fabrication of thin dislocation-reduced Ge layers grown on Si(001) substrates.",
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note = "Funding information: The authors express sincere thanks to the Laboratory of Nano and Quantum Engineering of the Leibniz University Hannover for providing analytical facilities. We would also like to express our thanks to the German Research Foundation for funding our research in the CMGe-project (DFG: 389061803).; 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference ; Conference date: 02-06-2019 Through 06-06-2019",
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AU - Bamscheidt, Y.

AU - Osten, Hans-Jörg

N1 - Funding information: The authors express sincere thanks to the Laboratory of Nano and Quantum Engineering of the Leibniz University Hannover for providing analytical facilities. We would also like to express our thanks to the German Research Foundation for funding our research in the CMGe-project (DFG: 389061803).

PY - 2019

Y1 - 2019

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AB - In this work, we report on the filtering of threading dislocations in epitaxial growth of thin Ge layers on Si(001) substrates using carbon delta layers. It has been observed that certain epitaxial conditions can enforce the bending of threading dislocations at the carbon layers. Part of the dislocations form closed loops in the bottom layers resulting in defect-reduced top layers. This approach enables the fabrication of thin dislocation-reduced Ge layers grown on Si(001) substrates.

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