Carbon doping of SiGe heterobipolar transistors

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • H. J. Osten
  • D. Knoll
  • B. Heinemann
  • B. Tillack

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Title of host publication1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
EditorsSammy Kayali
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19-23
Number of pages5
ISBN (electronic)0780352882, 9780780352889
Publication statusPublished - 6 Aug 2022
Externally publishedYes
Event1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States
Duration: 18 Sept 1998 → 18 Sept 1998

Publication series

Name1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Volume1998-September

Abstract

We demonstrate cutoff and maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C heterobipolar transistors (HBT). We also demonstrate almost ideal base current characteristics for these, even with carbon in the depleted regions. The incorporation of low carbon concentration (<1020 cm-3) within the SiGe region of SiGe HBTs can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. For example, transient enhanced boron diffusion due to BF2 implantation of the external base regions can be eliminated. Thus, the use of epitaxial SiGe:C instead of SiGe layers provides greater flexibility in process design, and wider latitude in process margin.

ASJC Scopus subject areas

Cite this

Carbon doping of SiGe heterobipolar transistors. / Osten, H. J.; Knoll, D.; Heinemann, B. et al.
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 2022. p. 19-23 750170 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Osten, HJ, Knoll, D, Heinemann, B & Tillack, B 2022, Carbon doping of SiGe heterobipolar transistors. in S Kayali (ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998., 750170, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998, vol. 1998-September, Institute of Electrical and Electronics Engineers Inc., pp. 19-23, 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998, Ann Arbor, United States, 18 Sept 1998. https://doi.org/10.1109/SMIC.1998.750170
Osten, H. J., Knoll, D., Heinemann, B., & Tillack, B. (2022). Carbon doping of SiGe heterobipolar transistors. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (pp. 19-23). Article 750170 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750170
Osten HJ, Knoll D, Heinemann B, Tillack B. Carbon doping of SiGe heterobipolar transistors. In Kayali S, editor, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. Institute of Electrical and Electronics Engineers Inc. 2022. p. 19-23. 750170. (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998). doi: 10.1109/SMIC.1998.750170
Osten, H. J. ; Knoll, D. ; Heinemann, B. et al. / Carbon doping of SiGe heterobipolar transistors. 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. editor / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 19-23 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998).
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