Carbon doping of sige

Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review

Authors

  • H. Jörg Osten

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Details

Original languageEnglish
Title of host publicationSilicon Heterostructure Handbook
Subtitle of host publicationMaterials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
Pages2.9-157-2.9-170
ISBN (electronic)9781420026580
Publication statusPublished - 1 Jan 2005

ASJC Scopus subject areas

Cite this

Carbon doping of sige. / Osten, H. Jörg.
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. 2005. p. 2.9-157-2.9-170.

Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review

Osten, HJ 2005, Carbon doping of sige. in Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. pp. 2.9-157-2.9-170.
Osten, H. J. (2005). Carbon doping of sige. In Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy (pp. 2.9-157-2.9-170)
Osten HJ. Carbon doping of sige. In Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. 2005. p. 2.9-157-2.9-170
Osten, H. Jörg. / Carbon doping of sige. Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. 2005. pp. 2.9-157-2.9-170
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