Details
| Original language | English |
|---|---|
| Pages (from-to) | 719-725 |
| Number of pages | 7 |
| Journal | IEEE journal of photovoltaics |
| Volume | 8 |
| Issue number | 3 |
| Early online date | 4 Apr 2018 |
| Publication status | Published - May 2018 |
Abstract
We report on an industrial large area, screen-printed, double-side contacted cell with polysilicon on oxide (POLO) junctions on both sides and an energy conversion efficiency of 22.3% (A = 244.15 cm2, Voc = 714 mV, FF = 81.1%, Jsc = 38.5 mA/cm2, measured in-house). This cell shows an extraordinarily low series resistance below 0.05 cm2. This confirms the low specific junction resistance observed recently for POLO junctions. The present cell suffers from 1) low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the indium tin oxide, 2) deterioration of the recombination behavior upon sputter deposition of a transparent conductive oxide (TCO), and 3) shunts near the edge due to nonadapted TCO edge exclusion. We address all of these limitations experimentally. In particular, we developed a plasma-enhanced chemical vapor deposition process for ZnO:Al, which does not compromise the passivation of the POLO junctions underneath. An estimation of the efficiency potential (based on the two-diode model and the assumption that all these building blocks can be successfully combined on a cell level) shows that 25.3% can be achieved with this cell concept. We also look into potential cost advantages of the POLO junction scheme for this cell structure, such as the usage of p-type Cz-Si material and the omission of Ag fingers.
Keywords
- Carrier selective contacts, passivation, polycrystalline silicon, silicon solar cell, transparent conductive oxide, zinc oxide
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: IEEE journal of photovoltaics, Vol. 8, No. 3, 05.2018, p. 719-725.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Building Blocks for Industrial, Screen-Printed Double-Side Contacted POLO Cells with Highly Transparent ZnO:Al Layers
AU - Peibst, Robby
AU - Larionova, Yevgeniya
AU - Reiter, Sina
AU - Wietler, Tobias F.
AU - Orlowski, Niklas
AU - Schäfer, Sören
AU - Min, Byungsul
AU - Stratmann, Manuel
AU - Tetzlaff, Dominic
AU - Krügener, Jan
AU - Hohne, Uwe
AU - Kahler, Jan Dirk
AU - Mehlich, Heiko
AU - Frigge, Steffen
AU - Brendel, Rolf
N1 - © 2018 IEEE.
PY - 2018/5
Y1 - 2018/5
N2 - We report on an industrial large area, screen-printed, double-side contacted cell with polysilicon on oxide (POLO) junctions on both sides and an energy conversion efficiency of 22.3% (A = 244.15 cm2, Voc = 714 mV, FF = 81.1%, Jsc = 38.5 mA/cm2, measured in-house). This cell shows an extraordinarily low series resistance below 0.05 cm2. This confirms the low specific junction resistance observed recently for POLO junctions. The present cell suffers from 1) low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the indium tin oxide, 2) deterioration of the recombination behavior upon sputter deposition of a transparent conductive oxide (TCO), and 3) shunts near the edge due to nonadapted TCO edge exclusion. We address all of these limitations experimentally. In particular, we developed a plasma-enhanced chemical vapor deposition process for ZnO:Al, which does not compromise the passivation of the POLO junctions underneath. An estimation of the efficiency potential (based on the two-diode model and the assumption that all these building blocks can be successfully combined on a cell level) shows that 25.3% can be achieved with this cell concept. We also look into potential cost advantages of the POLO junction scheme for this cell structure, such as the usage of p-type Cz-Si material and the omission of Ag fingers.
AB - We report on an industrial large area, screen-printed, double-side contacted cell with polysilicon on oxide (POLO) junctions on both sides and an energy conversion efficiency of 22.3% (A = 244.15 cm2, Voc = 714 mV, FF = 81.1%, Jsc = 38.5 mA/cm2, measured in-house). This cell shows an extraordinarily low series resistance below 0.05 cm2. This confirms the low specific junction resistance observed recently for POLO junctions. The present cell suffers from 1) low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the indium tin oxide, 2) deterioration of the recombination behavior upon sputter deposition of a transparent conductive oxide (TCO), and 3) shunts near the edge due to nonadapted TCO edge exclusion. We address all of these limitations experimentally. In particular, we developed a plasma-enhanced chemical vapor deposition process for ZnO:Al, which does not compromise the passivation of the POLO junctions underneath. An estimation of the efficiency potential (based on the two-diode model and the assumption that all these building blocks can be successfully combined on a cell level) shows that 25.3% can be achieved with this cell concept. We also look into potential cost advantages of the POLO junction scheme for this cell structure, such as the usage of p-type Cz-Si material and the omission of Ag fingers.
KW - Carrier selective contacts
KW - passivation
KW - polycrystalline silicon
KW - silicon solar cell
KW - transparent conductive oxide
KW - zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=85045904404&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2018.2813427
DO - 10.1109/jphotov.2018.2813427
M3 - Article
AN - SCOPUS:85045904404
VL - 8
SP - 719
EP - 725
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 3
ER -