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Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Robby Peibst
  • Udo Romer
  • Yevgeniya Larionova
  • Henning Schulte-Huxel
  • Jan Krugener
  • Rolf Brendel

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
  • Bosch Solar Energy AG
  • Applied Materials Incorporated

Details

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages852-856
Number of pages5
ISBN (electronic)9781479943982
Publication statusPublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Abstract

We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high Jsc - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side, (ii) a high Voc - excellent passivation including 'passivated contacts' based on poly-Si/c-Si junctions, and (iii) a high FF - large area contacts with low contact resistance and the absence of busbar losses due to a two-layer metallization. A lean process flow becomes feasible by utilizing two enabling technologies - in situ patterned ion implantation and module interconnection by laser welding (AMELI). We present experimental results for the main building blocks: (1) Patterned ion implantation yields an excellent recombination behavior homogeneously on 6″, (2) Ion-implanted poly-Si / c-Si junctions enabling Voc values up to 742 mV and J0e values down to 1.3fA/cm2, (3) Al2O3 front-side passivation enabling Jsc values up to 41.8 mA/cm2 and IQE values > 1 for λ < 350 nm, and (4) busbarless, silver-free AMELI two-layer interconnection. As an intermediate step, we fabricated ion-implanted BJBC cells with conventional junctions and metallization with efficiencies up to 22.1% on 6″.

Keywords

    back contact solar cells, Ion implantation, module-level interconnection, Photovoltaic cell, Silicon, Solar energy

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions. / Peibst, Robby; Romer, Udo; Larionova, Yevgeniya et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 852-856 6925049.

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Peibst, R, Romer, U, Larionova, Y, Schulte-Huxel, H, Ohrdes, T, Haberle, M, Lim, B, Krugener, J, Stichtenoth, D, Wutherich, T, Schollhorn, C, Graff, J & Brendel, R 2014, Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925049, Institute of Electrical and Electronics Engineers Inc., pp. 852-856, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8 Jun 2014. https://doi.org/10.1109/pvsc.2014.6925049
Peibst, R., Romer, U., Larionova, Y., Schulte-Huxel, H., Ohrdes, T., Haberle, M., Lim, B., Krugener, J., Stichtenoth, D., Wutherich, T., Schollhorn, C., Graff, J., & Brendel, R. (2014). Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 852-856). Article 6925049 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc.2014.6925049
Peibst R, Romer U, Larionova Y, Schulte-Huxel H, Ohrdes T, Haberle M et al. Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 852-856. 6925049 doi: 10.1109/pvsc.2014.6925049
Peibst, Robby ; Romer, Udo ; Larionova, Yevgeniya et al. / Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 852-856
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title = "Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions",
abstract = "We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high Jsc - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side, (ii) a high Voc - excellent passivation including 'passivated contacts' based on poly-Si/c-Si junctions, and (iii) a high FF - large area contacts with low contact resistance and the absence of busbar losses due to a two-layer metallization. A lean process flow becomes feasible by utilizing two enabling technologies - in situ patterned ion implantation and module interconnection by laser welding (AMELI). We present experimental results for the main building blocks: (1) Patterned ion implantation yields an excellent recombination behavior homogeneously on 6″, (2) Ion-implanted poly-Si / c-Si junctions enabling Voc values up to 742 mV and J0e values down to 1.3fA/cm2, (3) Al2O3 front-side passivation enabling Jsc values up to 41.8 mA/cm2 and IQE values > 1 for λ < 350 nm, and (4) busbarless, silver-free AMELI two-layer interconnection. As an intermediate step, we fabricated ion-implanted BJBC cells with conventional junctions and metallization with efficiencies up to 22.1% on 6″.",
keywords = "back contact solar cells, Ion implantation, module-level interconnection, Photovoltaic cell, Silicon, Solar energy",
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note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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TY - GEN

T1 - Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions

AU - Peibst, Robby

AU - Romer, Udo

AU - Larionova, Yevgeniya

AU - Schulte-Huxel, Henning

AU - Ohrdes, Tobias

AU - Haberle, Michael

AU - Lim, Bianca

AU - Krugener, Jan

AU - Stichtenoth, Daniel

AU - Wutherich, Tobias

AU - Schollhorn, Claus

AU - Graff, John

AU - Brendel, Rolf

PY - 2014/10/15

Y1 - 2014/10/15

N2 - We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high Jsc - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side, (ii) a high Voc - excellent passivation including 'passivated contacts' based on poly-Si/c-Si junctions, and (iii) a high FF - large area contacts with low contact resistance and the absence of busbar losses due to a two-layer metallization. A lean process flow becomes feasible by utilizing two enabling technologies - in situ patterned ion implantation and module interconnection by laser welding (AMELI). We present experimental results for the main building blocks: (1) Patterned ion implantation yields an excellent recombination behavior homogeneously on 6″, (2) Ion-implanted poly-Si / c-Si junctions enabling Voc values up to 742 mV and J0e values down to 1.3fA/cm2, (3) Al2O3 front-side passivation enabling Jsc values up to 41.8 mA/cm2 and IQE values > 1 for λ < 350 nm, and (4) busbarless, silver-free AMELI two-layer interconnection. As an intermediate step, we fabricated ion-implanted BJBC cells with conventional junctions and metallization with efficiencies up to 22.1% on 6″.

AB - We propose a process for a back-junction back-contacted solar cell (including module interconnection) combining a high efficiency potential and a lean process flow. This structure offers potential for (i) a high Jsc - no optical shading losses due to the absence of front-side metallization and minimized absorption losses at the cell front-side, (ii) a high Voc - excellent passivation including 'passivated contacts' based on poly-Si/c-Si junctions, and (iii) a high FF - large area contacts with low contact resistance and the absence of busbar losses due to a two-layer metallization. A lean process flow becomes feasible by utilizing two enabling technologies - in situ patterned ion implantation and module interconnection by laser welding (AMELI). We present experimental results for the main building blocks: (1) Patterned ion implantation yields an excellent recombination behavior homogeneously on 6″, (2) Ion-implanted poly-Si / c-Si junctions enabling Voc values up to 742 mV and J0e values down to 1.3fA/cm2, (3) Al2O3 front-side passivation enabling Jsc values up to 41.8 mA/cm2 and IQE values > 1 for λ < 350 nm, and (4) busbarless, silver-free AMELI two-layer interconnection. As an intermediate step, we fabricated ion-implanted BJBC cells with conventional junctions and metallization with efficiencies up to 22.1% on 6″.

KW - back contact solar cells

KW - Ion implantation

KW - module-level interconnection

KW - Photovoltaic cell

KW - Silicon

KW - Solar energy

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DO - 10.1109/pvsc.2014.6925049

M3 - Conference contribution

AN - SCOPUS:84912078142

SP - 852

EP - 856

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

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