Details
| Original language | English |
|---|---|
| Title of host publication | Extreme Ultraviolet (EUV) Lithography II |
| Publication status | Published - 8 Apr 2011 |
| Externally published | Yes |
| Event | Extreme Ultraviolet (EUV) Lithography II - San Jose, CA, United States Duration: 28 Feb 2011 → 3 Mar 2011 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 7969 |
| ISSN (Print) | 0277-786X |
Abstract
A reliable and compact EUV-spectrometer adapted for the broadband analysis of curved EUV-optics for near normal incidence applications will be presented. Using a specific design for the specimen holder, the limits of both types of samples, convex and concave, can be verified. The capability of the device is confirmed by investigations in the spectral reflectivity of a single EUV-multilayer mirror deposited on a silicon wafer. Its radius of curvature (ROC) is continuously adjustable, providing a direct comparison of the detected peak reflectivity, peak location and spectral bandwidth in dependence on its curvature. The range of curvature applied is in compliance with optics specifications of current projection systems for EUV-lithography.
Keywords
- broadband spectra, curved optics, EUV/XUV, Kirkpatrick-Baez, laser produced plasma, multilayer, normal incidence, reflectometry
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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Extreme Ultraviolet (EUV) Lithography II. 2011. 796928 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7969).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Broadband spectrophotometry on nonplanar EUV multilayer optics
AU - Balasa, Istvan
AU - Blaschke, H.
AU - Ristau, Detlev
PY - 2011/4/8
Y1 - 2011/4/8
N2 - A reliable and compact EUV-spectrometer adapted for the broadband analysis of curved EUV-optics for near normal incidence applications will be presented. Using a specific design for the specimen holder, the limits of both types of samples, convex and concave, can be verified. The capability of the device is confirmed by investigations in the spectral reflectivity of a single EUV-multilayer mirror deposited on a silicon wafer. Its radius of curvature (ROC) is continuously adjustable, providing a direct comparison of the detected peak reflectivity, peak location and spectral bandwidth in dependence on its curvature. The range of curvature applied is in compliance with optics specifications of current projection systems for EUV-lithography.
AB - A reliable and compact EUV-spectrometer adapted for the broadband analysis of curved EUV-optics for near normal incidence applications will be presented. Using a specific design for the specimen holder, the limits of both types of samples, convex and concave, can be verified. The capability of the device is confirmed by investigations in the spectral reflectivity of a single EUV-multilayer mirror deposited on a silicon wafer. Its radius of curvature (ROC) is continuously adjustable, providing a direct comparison of the detected peak reflectivity, peak location and spectral bandwidth in dependence on its curvature. The range of curvature applied is in compliance with optics specifications of current projection systems for EUV-lithography.
KW - broadband spectra
KW - curved optics
KW - EUV/XUV
KW - Kirkpatrick-Baez
KW - laser produced plasma
KW - multilayer
KW - normal incidence
KW - reflectometry
UR - http://www.scopus.com/inward/record.url?scp=79957952809&partnerID=8YFLogxK
U2 - 10.1117/12.881577
DO - 10.1117/12.881577
M3 - Conference contribution
AN - SCOPUS:79957952809
SN - 9780819485281
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Extreme Ultraviolet (EUV) Lithography II
T2 - Extreme Ultraviolet (EUV) Lithography II
Y2 - 28 February 2011 through 3 March 2011
ER -