Breakdown behaviour of silicon insulation with differently doped layers under DC stress

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Original languageEnglish
Title of host publicationProceedings of the 21st International Symposium on High Voltage Engineering, Volume 2, ISH 2019
Place of PublicationCham
PublisherSpringer Nature
Pages221-230
Number of pages10
ISBN (electronic)978-3-030-31680-8
ISBN (print)9783030316792
Publication statusPublished - 2020
Event21st International Symposium on High Voltage Engineering, ISH 2019 - Budapest, Hungary
Duration: 26 Aug 201930 Aug 2019

Publication series

NameLecture Notes in Electrical Engineering
Volume599 LNEE
ISSN (Print)1876-1100
ISSN (electronic)1876-1119

Abstract

The aim of this work is the investigation of the electrical properties of such layered dielectrics under high DC stress. The individual layers have different dielectric strengths, which are dependent on the electric conductivity and the temperature. For this purpose, test samples were made, which are composed of two silicone layers, one without fillers and the other made of the same base silicone, mixed with a specific amount of graphite powder. A challenge here is the determination of an appropriate amount of graphite additive, without deteriorating the dielectric strength of the layered silicone sample. It must be also ensured that by the preparation of samples a homogenous distribution of the graphite in the material prevails. Simultaneously, the samples should be bubble-free and flawless. Accordingly, the material was subjected to several degassing and vibration processes. The change in the dielectric strength is to be investigated by measuring and comparing the DC breakdown voltage on layered and non-layered test samples. In order to clarify the influence of the temperature on the properties of the silicone elastomer, each measurement series was repeated at different temperatures. In addition, the breakdown spots are analyzed with a digital microscope in order to determine the direction of the breakdown in the layered test samples.

Keywords

    HVDC-cable, Layered dielectrics, Space charge

ASJC Scopus subject areas

Cite this

Breakdown behaviour of silicon insulation with differently doped layers under DC stress. / Aganbegović, Mirnes; Imani, Mohammad Taghi; Werle, Peter.
Proceedings of the 21st International Symposium on High Voltage Engineering, Volume 2, ISH 2019. Cham: Springer Nature, 2020. p. 221-230 (Lecture Notes in Electrical Engineering; Vol. 599 LNEE).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Aganbegović, M, Imani, MT & Werle, P 2020, Breakdown behaviour of silicon insulation with differently doped layers under DC stress. in Proceedings of the 21st International Symposium on High Voltage Engineering, Volume 2, ISH 2019. Lecture Notes in Electrical Engineering, vol. 599 LNEE, Springer Nature, Cham, pp. 221-230, 21st International Symposium on High Voltage Engineering, ISH 2019, Budapest, Hungary, 26 Aug 2019. https://doi.org/10.1007/978-3-030-31680-8_23
Aganbegović, M., Imani, M. T., & Werle, P. (2020). Breakdown behaviour of silicon insulation with differently doped layers under DC stress. In Proceedings of the 21st International Symposium on High Voltage Engineering, Volume 2, ISH 2019 (pp. 221-230). (Lecture Notes in Electrical Engineering; Vol. 599 LNEE). Springer Nature. https://doi.org/10.1007/978-3-030-31680-8_23
Aganbegović M, Imani MT, Werle P. Breakdown behaviour of silicon insulation with differently doped layers under DC stress. In Proceedings of the 21st International Symposium on High Voltage Engineering, Volume 2, ISH 2019. Cham: Springer Nature. 2020. p. 221-230. (Lecture Notes in Electrical Engineering). Epub 2019 Oct 31. doi: 10.1007/978-3-030-31680-8_23
Aganbegović, Mirnes ; Imani, Mohammad Taghi ; Werle, Peter. / Breakdown behaviour of silicon insulation with differently doped layers under DC stress. Proceedings of the 21st International Symposium on High Voltage Engineering, Volume 2, ISH 2019. Cham : Springer Nature, 2020. pp. 221-230 (Lecture Notes in Electrical Engineering).
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