Details
| Original language | English |
|---|---|
| Title of host publication | High Purity Silicon 12 |
| Publisher | Electrochemical Society, Inc. |
| Pages | 123-136 |
| Number of pages | 14 |
| Edition | 5 |
| ISBN (print) | 9781607683537 |
| Publication status | Published - 2013 |
| Externally published | Yes |
| Event | 12th High Purity Silicon Symposium - 222nd ECS Meeting - Honolulu, HI, United States Duration: 7 Oct 2012 → 11 Oct 2012 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 5 |
| Volume | 50 |
| ISSN (Print) | 1938-5862 |
| ISSN (electronic) | 1938-6737 |
Abstract
Minority carrier lifetime degradation induced by illumination was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges during the degradation was found to be identical to the fast-stage centre (FRC) which is known for p-Si where it is produced at a rate proportional to the squared hole concentration, p 2. In n-type material where holes are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear as a result of the dependence of p on the concentration of FRC. This non-linearity is well reproduced by simulations. An analysis of the injection level dependence of the minority carrier lifetime shows that FRC exists in 3 charge states (- 1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. FRC is identified as a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO2 - a complex involving an interstitial boron.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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High Purity Silicon 12. 5. ed. Electrochemical Society, Inc., 2013. p. 123-136 (ECS Transactions; Vol. 50, No. 5).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Boron-oxygen related lifetime degradation in p-type and n-type silicon
AU - Voronkov, V. V.
AU - Falster, R.
AU - Lim, B.
AU - Schmidt, J.
PY - 2013
Y1 - 2013
N2 - Minority carrier lifetime degradation induced by illumination was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges during the degradation was found to be identical to the fast-stage centre (FRC) which is known for p-Si where it is produced at a rate proportional to the squared hole concentration, p 2. In n-type material where holes are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear as a result of the dependence of p on the concentration of FRC. This non-linearity is well reproduced by simulations. An analysis of the injection level dependence of the minority carrier lifetime shows that FRC exists in 3 charge states (- 1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. FRC is identified as a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO2 - a complex involving an interstitial boron.
AB - Minority carrier lifetime degradation induced by illumination was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges during the degradation was found to be identical to the fast-stage centre (FRC) which is known for p-Si where it is produced at a rate proportional to the squared hole concentration, p 2. In n-type material where holes are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear as a result of the dependence of p on the concentration of FRC. This non-linearity is well reproduced by simulations. An analysis of the injection level dependence of the minority carrier lifetime shows that FRC exists in 3 charge states (- 1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. FRC is identified as a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO2 - a complex involving an interstitial boron.
UR - http://www.scopus.com/inward/record.url?scp=84885753459&partnerID=8YFLogxK
U2 - 10.1149/05005.0123ecst
DO - 10.1149/05005.0123ecst
M3 - Conference contribution
AN - SCOPUS:84885753459
SN - 9781607683537
T3 - ECS Transactions
SP - 123
EP - 136
BT - High Purity Silicon 12
PB - Electrochemical Society, Inc.
T2 - 12th High Purity Silicon Symposium - 222nd ECS Meeting
Y2 - 7 October 2012 through 11 October 2012
ER -