Details
| Original language | English |
|---|---|
| Pages (from-to) | 2246-2250 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 22 |
| Issue number | 6 |
| Publication status | Published - 7 Oct 2004 |
Abstract
Boron surfactant enhanced solid phase epitaxy (SPE) of thin Si films on CaF2/Si(111) was analyzed. Deposition of 1ML of boron atoms on the CaF2 surface at room temperature before Si deposition resulted in the formation of Si clusters. Deposition of boron atoms directly on top of the amorphous Si film followed by annealing to about 635°C resulted in continous and smooth epitaxial Si films on CaF2 with sharp surface reconstruction. It was found that the quality of layers obtained using the annealing method was much better than SPE with 1 ML of surfactant predeposited on the CaF2 surface.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
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In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 6, 07.10.2004, p. 2246-2250.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Boron surfactant enhanced growth of thin Si films on CaF2/SI
AU - Wang, C. R.
AU - Müller, B. H.
AU - Bugiel, E.
AU - Wietler, T.
AU - Bierkandt, M.
AU - Hofmann, K. R.
AU - Zaumseil, P.
PY - 2004/10/7
Y1 - 2004/10/7
N2 - Boron surfactant enhanced solid phase epitaxy (SPE) of thin Si films on CaF2/Si(111) was analyzed. Deposition of 1ML of boron atoms on the CaF2 surface at room temperature before Si deposition resulted in the formation of Si clusters. Deposition of boron atoms directly on top of the amorphous Si film followed by annealing to about 635°C resulted in continous and smooth epitaxial Si films on CaF2 with sharp surface reconstruction. It was found that the quality of layers obtained using the annealing method was much better than SPE with 1 ML of surfactant predeposited on the CaF2 surface.
AB - Boron surfactant enhanced solid phase epitaxy (SPE) of thin Si films on CaF2/Si(111) was analyzed. Deposition of 1ML of boron atoms on the CaF2 surface at room temperature before Si deposition resulted in the formation of Si clusters. Deposition of boron atoms directly on top of the amorphous Si film followed by annealing to about 635°C resulted in continous and smooth epitaxial Si films on CaF2 with sharp surface reconstruction. It was found that the quality of layers obtained using the annealing method was much better than SPE with 1 ML of surfactant predeposited on the CaF2 surface.
UR - http://www.scopus.com/inward/record.url?scp=10244249215&partnerID=8YFLogxK
U2 - 10.1116/1.1789215
DO - 10.1116/1.1789215
M3 - Article
AN - SCOPUS:10244249215
VL - 22
SP - 2246
EP - 2250
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SN - 0734-2101
IS - 6
ER -