Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

External Research Organisations

  • Reutlingen University
  • University of Stuttgart
  • Robert Bosch GmbH
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Details

Original languageEnglish
Title of host publicationESSCIRC 2014 - Proceedings of the 40th European Solid-State Circuit Conference
EditorsPietro Andreani, Andrea Bevilacqua, Gaudenzio Meneghesso
Pages159-162
Number of pages4
ISBN (electronic)9781479956944
Publication statusPublished - 31 Oct 2014
Externally publishedYes
Event40th European Solid-State Circuit Conference, ESSCIRC 2014 - Venezia Lido, Italy
Duration: 22 Sept 201426 Sept 2014

Publication series

NameEuropean Solid-State Circuits Conference
ISSN (Print)1930-8833

Abstract

Bootstrap circuits are mainly used for supplying a gate driver circuit to provide the gate overdrive voltage for a high-side NMOS transistor. The required charge has to be provided by a bootstrap capacitor which is often too large for integration if an acceptable voltage dip at the capacitor has to be guaranteed. Three options of an area efficient bootstrap circuit for a high side driver with an output stage of two NMOS transistors are proposed. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and connected when the gate driver turns on. A high voltage swing at the second capacitor leads to a high charge allocation. Both bootstrap capacitors require up to 70% less area compared to a conventional bootstrap circuit. This enables compact power management systems with fewer discrete components and smaller die size. A calculation guideline for optimum bootstrap capacitor sizing is given. The circuit was manufactured in a 180nm high-voltage BiCMOS technology as part of a high-voltage gate driver. Measurements confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit including two stacked 75.8pF and 18.9pF capacitors results in a voltage dip lower than 1V. This matches well with the theory of the calculation guideline.

ASJC Scopus subject areas

Cite this

Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems. / Seidel, Achim; Costa, Marco; Joos, Joachim et al.
ESSCIRC 2014 - Proceedings of the 40th European Solid-State Circuit Conference. ed. / Pietro Andreani; Andrea Bevilacqua; Gaudenzio Meneghesso. 2014. p. 159-162 6942046 (European Solid-State Circuits Conference).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Seidel, A, Costa, M, Joos, J & Wicht, B 2014, Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems. in P Andreani, A Bevilacqua & G Meneghesso (eds), ESSCIRC 2014 - Proceedings of the 40th European Solid-State Circuit Conference., 6942046, European Solid-State Circuits Conference, pp. 159-162, 40th European Solid-State Circuit Conference, ESSCIRC 2014, Venezia Lido, Italy, 22 Sept 2014. https://doi.org/10.1109/ESSCIRC.2014.6942046
Seidel, A., Costa, M., Joos, J., & Wicht, B. (2014). Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems. In P. Andreani, A. Bevilacqua, & G. Meneghesso (Eds.), ESSCIRC 2014 - Proceedings of the 40th European Solid-State Circuit Conference (pp. 159-162). Article 6942046 (European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2014.6942046
Seidel A, Costa M, Joos J, Wicht B. Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems. In Andreani P, Bevilacqua A, Meneghesso G, editors, ESSCIRC 2014 - Proceedings of the 40th European Solid-State Circuit Conference. 2014. p. 159-162. 6942046. (European Solid-State Circuits Conference). doi: 10.1109/ESSCIRC.2014.6942046
Seidel, Achim ; Costa, Marco ; Joos, Joachim et al. / Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems. ESSCIRC 2014 - Proceedings of the 40th European Solid-State Circuit Conference. editor / Pietro Andreani ; Andrea Bevilacqua ; Gaudenzio Meneghesso. 2014. pp. 159-162 (European Solid-State Circuits Conference).
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