Details
| Original language | English |
|---|---|
| Article number | 155307 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 76 |
| Issue number | 15 |
| Publication status | Published - 9 Oct 2007 |
Abstract
We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain voltages for several consecutive electron numbers on the quantum dot. For certain configurations, we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts, we relate this to a slow switching between different electron configurations on the quantum dot.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 76, No. 15, 155307, 09.10.2007.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Bimodal counting statistics in single-electron tunneling through a quantum dot
AU - Fricke, C.
AU - Hohls, F.
AU - Wegscheider, W.
AU - Haug, R. J.
PY - 2007/10/9
Y1 - 2007/10/9
N2 - We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain voltages for several consecutive electron numbers on the quantum dot. For certain configurations, we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts, we relate this to a slow switching between different electron configurations on the quantum dot.
AB - We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain voltages for several consecutive electron numbers on the quantum dot. For certain configurations, we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts, we relate this to a slow switching between different electron configurations on the quantum dot.
UR - http://www.scopus.com/inward/record.url?scp=35148825446&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.76.155307
DO - 10.1103/PhysRevB.76.155307
M3 - Article
AN - SCOPUS:35148825446
VL - 76
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 15
M1 - 155307
ER -