Bayesian inversion for nanowire field-effect sensors

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Amirreza Khodadadian
  • Benjamin Stadlbauer
  • Clemens Heitzinger

Research Organisations

External Research Organisations

  • TU Wien (TUW)
  • Arizona State University
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Details

Original languageEnglish
Pages (from-to)147-159
Number of pages13
JournalJournal of Computational Electronics
Volume19
Issue number1
Early online date13 Nov 2019
Publication statusPublished - 1 Mar 2020

Abstract

Nanowire field-effect sensors have recently been developed for label-free detection of biomolecules. In this work, we introduce a computational technique based on Bayesian estimation to determine the physical parameters of the sensor and, more importantly, the properties of the analyte molecules. To that end, we first propose a PDE-based model to simulate the device charge transport and electrochemical behavior. Then, the adaptive Metropolis algorithm with delayed rejection is applied to estimate the posterior distribution of unknown parameters, namely molecule charge density, molecule density, doping concentration, and electron and hole mobilities. We determine the device and molecules properties simultaneously, and we also calculate the molecule density as the only parameter after having determined the device parameters. This approach makes it possible not only to determine unknown parameters, but it also shows how well each parameter can be determined by yielding the probability density function (pdf).

Keywords

    Adaptive Metropolis–Hastings algorithm, Markov chain Monte Carlo, Silicon nanowire sensors, Stochastic drift–diffusion–Poisson–Boltzmann system

ASJC Scopus subject areas

Cite this

Bayesian inversion for nanowire field-effect sensors. / Khodadadian, Amirreza; Stadlbauer, Benjamin; Heitzinger, Clemens.
In: Journal of Computational Electronics, Vol. 19, No. 1, 01.03.2020, p. 147-159.

Research output: Contribution to journalArticleResearchpeer review

Khodadadian A, Stadlbauer B, Heitzinger C. Bayesian inversion for nanowire field-effect sensors. Journal of Computational Electronics. 2020 Mar 1;19(1):147-159. Epub 2019 Nov 13. doi: 10.1007/s10825-019-01417-0, 10.48550/arXiv.1904.09848
Khodadadian, Amirreza ; Stadlbauer, Benjamin ; Heitzinger, Clemens. / Bayesian inversion for nanowire field-effect sensors. In: Journal of Computational Electronics. 2020 ; Vol. 19, No. 1. pp. 147-159.
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