Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Claudius Klein
  • N. J. Vollmers
  • U. Gerstmann
  • P. Zahl
  • Daniel Lükermann
  • G. Jnawali
  • Herbert Pfnür
  • Christoph Tegenkamp
  • P. Sutter
  • Wolf Gero Schmidt
  • M. Horn-Von Hoegen

Research Organisations

External Research Organisations

  • University of Duisburg-Essen
  • Paderborn University
  • Brookhaven National Laboratory (BNL)
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Details

Original languageEnglish
Article number195441
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number19
Publication statusPublished - 27 May 2015

Abstract

By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. It allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.

ASJC Scopus subject areas

Cite this

Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. / Klein, Claudius; Vollmers, N. J.; Gerstmann, U. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 19, 195441, 27.05.2015.

Research output: Contribution to journalArticleResearchpeer review

Klein, C, Vollmers, NJ, Gerstmann, U, Zahl, P, Lükermann, D, Jnawali, G, Pfnür, H, Tegenkamp, C, Sutter, P, Schmidt, WG & Horn-Von Hoegen, M 2015, 'Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films', Physical Review B - Condensed Matter and Materials Physics, vol. 91, no. 19, 195441. https://doi.org/10.1103/PhysRevB.91.195441
Klein, C., Vollmers, N. J., Gerstmann, U., Zahl, P., Lükermann, D., Jnawali, G., Pfnür, H., Tegenkamp, C., Sutter, P., Schmidt, W. G., & Horn-Von Hoegen, M. (2015). Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. Physical Review B - Condensed Matter and Materials Physics, 91(19), Article 195441. https://doi.org/10.1103/PhysRevB.91.195441
Klein C, Vollmers NJ, Gerstmann U, Zahl P, Lükermann D, Jnawali G et al. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. Physical Review B - Condensed Matter and Materials Physics. 2015 May 27;91(19):195441. doi: 10.1103/PhysRevB.91.195441
Klein, Claudius ; Vollmers, N. J. ; Gerstmann, U. et al. / Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films. In: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Vol. 91, No. 19.
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