Details
| Original language | English |
|---|---|
| Pages (from-to) | 1771-1778 |
| Number of pages | 8 |
| Journal | Chemistry of materials |
| Volume | 24 |
| Issue number | 10 |
| Early online date | 11 May 2012 |
| Publication status | Published - 22 May 2012 |
| Externally published | Yes |
Abstract
The advanced application of wide-band gap semiconductors in areas like photovoltaics, optoelectronics, or photocatalysis requires a precise control over electronic properties. Zinc oxide is favorable for large-scale technological applications now and in the future because of the large, natural abundance of the involved, chemical elements. Often it is important that the band gap can be controlled precisely. While a blue-shift of the band gap can be reached quite easily using the quantum-size effect, it is still very difficult to achieve a red-shift. We present a powerful method for the band gap engineering of ZnO via the incorporation of sulfur as a solid solutions. The reduction of the energy gap is controlled by ZnO 1-xS x composition, whereas the latter is adjusted via special organometallic precursor molecules. The material can be supplied in a continuous fashion and in a more refined morphology, for instance spherical ZnO 1-xS x colloids with sizes below λ vis/2 (≈ 200 nm). As a concrete application of contemporary importance first steps toward the full inorganic UV protection are made.
Keywords
- aerosol synthesis, band gap engineering, metal oxides, precursor chemistry, semiconductors, UV protection
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Chemical Engineering(all)
- General Chemical Engineering
- Materials Science(all)
- Materials Chemistry
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In: Chemistry of materials, Vol. 24, No. 10, 22.05.2012, p. 1771-1778.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Band-gap engineering of zinc oxide colloids via lattice substitution with sulfur leading to materials with advanced properties for optical applications like full inorganic UV protection
AU - Lehr, Daniela
AU - Luka, Martin
AU - Wagner, Markus R.
AU - Bügler, Max
AU - Hoffmann, Axel
AU - Polarz, Sebastian
PY - 2012/5/22
Y1 - 2012/5/22
N2 - The advanced application of wide-band gap semiconductors in areas like photovoltaics, optoelectronics, or photocatalysis requires a precise control over electronic properties. Zinc oxide is favorable for large-scale technological applications now and in the future because of the large, natural abundance of the involved, chemical elements. Often it is important that the band gap can be controlled precisely. While a blue-shift of the band gap can be reached quite easily using the quantum-size effect, it is still very difficult to achieve a red-shift. We present a powerful method for the band gap engineering of ZnO via the incorporation of sulfur as a solid solutions. The reduction of the energy gap is controlled by ZnO 1-xS x composition, whereas the latter is adjusted via special organometallic precursor molecules. The material can be supplied in a continuous fashion and in a more refined morphology, for instance spherical ZnO 1-xS x colloids with sizes below λ vis/2 (≈ 200 nm). As a concrete application of contemporary importance first steps toward the full inorganic UV protection are made.
AB - The advanced application of wide-band gap semiconductors in areas like photovoltaics, optoelectronics, or photocatalysis requires a precise control over electronic properties. Zinc oxide is favorable for large-scale technological applications now and in the future because of the large, natural abundance of the involved, chemical elements. Often it is important that the band gap can be controlled precisely. While a blue-shift of the band gap can be reached quite easily using the quantum-size effect, it is still very difficult to achieve a red-shift. We present a powerful method for the band gap engineering of ZnO via the incorporation of sulfur as a solid solutions. The reduction of the energy gap is controlled by ZnO 1-xS x composition, whereas the latter is adjusted via special organometallic precursor molecules. The material can be supplied in a continuous fashion and in a more refined morphology, for instance spherical ZnO 1-xS x colloids with sizes below λ vis/2 (≈ 200 nm). As a concrete application of contemporary importance first steps toward the full inorganic UV protection are made.
KW - aerosol synthesis
KW - band gap engineering
KW - metal oxides
KW - precursor chemistry
KW - semiconductors
KW - UV protection
UR - http://www.scopus.com/inward/record.url?scp=84861362235&partnerID=8YFLogxK
U2 - 10.1021/cm300239q
DO - 10.1021/cm300239q
M3 - Article
AN - SCOPUS:84861362235
VL - 24
SP - 1771
EP - 1778
JO - Chemistry of materials
JF - Chemistry of materials
SN - 0897-4756
IS - 10
ER -