Details
| Original language | English |
|---|---|
| Pages (from-to) | 199-210 |
| Number of pages | 12 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 15 |
| Issue number | 3 |
| Early online date | 20 Sept 2006 |
| Publication status | Published - May 2007 |
| Externally published | Yes |
Abstract
The in situ formation of an emitter in monocrystalline silicon thin-film solar cells by solid-state diffusion of dopants from the growth substrate during epitaxy is demonstrated. This approach, that we denote autodiffusion, combines the epitaxy and the diffusion into one single process. Layer-transfer with porous silicon (PSI process) is used to fabricate n-type silicon thin-film solar cells. The cells feature a boron emitter on the cell rear side that is formed by autodiffusion. The sheet resistance of this autodiffused emitter is 330 Ω/□- An independently confirmed conversion efficiency of (14.5 ± 0.4)% with a high short circuit current density of (33.3 ± 0.8) mA/cm2 is achieved for a 2 × 2 cm2 large cell with a thickness of (24 ± 1) μm. Transferred n-type silicon thin films made from the same run as the cells show effective carrier lifetimes exceeding 13 μs. From these samples a bulk diffusion ength L > 111 μm is deduced. Amorphous silicon is used to passivate the rear surface of these samples after the layer-transfer resulting in a surface recombination velocity lower than 38cm/s.
Keywords
- Autodoping-Porous silicon (PSI) process, Crystalline silicon thin-film solar cell, Emitter diffusion, Solid-state diffusion
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 15, No. 3, 05.2007, p. 199-210.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Autodiffusion
T2 - A novel method for emitter formation in crystalline silicon thin-film solar cells
AU - Wolf, A.
AU - Terheiden, B.
AU - Brendel, R.
PY - 2007/5
Y1 - 2007/5
N2 - The in situ formation of an emitter in monocrystalline silicon thin-film solar cells by solid-state diffusion of dopants from the growth substrate during epitaxy is demonstrated. This approach, that we denote autodiffusion, combines the epitaxy and the diffusion into one single process. Layer-transfer with porous silicon (PSI process) is used to fabricate n-type silicon thin-film solar cells. The cells feature a boron emitter on the cell rear side that is formed by autodiffusion. The sheet resistance of this autodiffused emitter is 330 Ω/□- An independently confirmed conversion efficiency of (14.5 ± 0.4)% with a high short circuit current density of (33.3 ± 0.8) mA/cm2 is achieved for a 2 × 2 cm2 large cell with a thickness of (24 ± 1) μm. Transferred n-type silicon thin films made from the same run as the cells show effective carrier lifetimes exceeding 13 μs. From these samples a bulk diffusion ength L > 111 μm is deduced. Amorphous silicon is used to passivate the rear surface of these samples after the layer-transfer resulting in a surface recombination velocity lower than 38cm/s.
AB - The in situ formation of an emitter in monocrystalline silicon thin-film solar cells by solid-state diffusion of dopants from the growth substrate during epitaxy is demonstrated. This approach, that we denote autodiffusion, combines the epitaxy and the diffusion into one single process. Layer-transfer with porous silicon (PSI process) is used to fabricate n-type silicon thin-film solar cells. The cells feature a boron emitter on the cell rear side that is formed by autodiffusion. The sheet resistance of this autodiffused emitter is 330 Ω/□- An independently confirmed conversion efficiency of (14.5 ± 0.4)% with a high short circuit current density of (33.3 ± 0.8) mA/cm2 is achieved for a 2 × 2 cm2 large cell with a thickness of (24 ± 1) μm. Transferred n-type silicon thin films made from the same run as the cells show effective carrier lifetimes exceeding 13 μs. From these samples a bulk diffusion ength L > 111 μm is deduced. Amorphous silicon is used to passivate the rear surface of these samples after the layer-transfer resulting in a surface recombination velocity lower than 38cm/s.
KW - Autodoping-Porous silicon (PSI) process
KW - Crystalline silicon thin-film solar cell
KW - Emitter diffusion
KW - Solid-state diffusion
UR - http://www.scopus.com/inward/record.url?scp=34247167163&partnerID=8YFLogxK
U2 - 10.1002/pip.727
DO - 10.1002/pip.727
M3 - Article
AN - SCOPUS:34247167163
VL - 15
SP - 199
EP - 210
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 3
ER -