Details
| Original language | English |
|---|---|
| Title of host publication | Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 |
| Publisher | IEEE Computer Society |
| Pages | 992-995 |
| Number of pages | 4 |
| ISBN (print) | 1424400163, 9781424400164, 1-4244-0017-1 |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006 Conference number: 4 |
Abstract
The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
ASJC Scopus subject areas
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Materials Chemistry
Sustainable Development Goals
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 992-995 4059797.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Autodiffused boron emitter for n-type monocrystalline SI thin-film solar cells
AU - Wolf, Andreas
AU - Terheiden, Barbara
AU - Brendel, Rolf
N1 - Conference code: 4
PY - 2006
Y1 - 2006
N2 - The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
AB - The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
UR - http://www.scopus.com/inward/record.url?scp=41749120312&partnerID=8YFLogxK
U2 - 10.1109/WCPEC.2006.279285
DO - 10.1109/WCPEC.2006.279285
M3 - Conference contribution
AN - SCOPUS:41749120312
SN - 1424400163
SN - 9781424400164
SN - 1-4244-0017-1
SP - 992
EP - 995
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4)
Y2 - 7 May 2006 through 12 May 2006
ER -