Details
| Original language | English |
|---|---|
| Title of host publication | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
| ISBN (electronic) | 9781424416417 |
| Publication status | Published - 2008 |
| Externally published | Yes |
| Event | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We present independently confirmed efficiencies above 20% for PERC-type solar cells with the point-contacted rear being either passivated by atomic-layer-deposited Al2O3 or by stacks consisting of an ultrathin Al2O3 film and a thicker PECVD-SiOx layer. Internal quantum efficiency measurements reveal that the effective rear surface recombination velocities of the single-layer Al2O 3-passivated cells are comparable to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al2O3/SiOx-passivated cells are even lower. Very low effective rear surface recombination velocities of only 70 cm/s are reported for the Al2O3/SiOx stacks, including metalized areas on the cell rear.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922636 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells
AU - Schmidt, Jan
AU - Merkle, Agnes
AU - Hoex, B.
AU - Van De Sanden, M. C.M.
AU - Kessels, W. M.M.
AU - Brendel, Rolf
N1 - Funding Information: We gratefully acknowl edge the financial support provided by the German State of Lower Saxony and the Netherlands Technology Foundation STW.
PY - 2008
Y1 - 2008
N2 - We present independently confirmed efficiencies above 20% for PERC-type solar cells with the point-contacted rear being either passivated by atomic-layer-deposited Al2O3 or by stacks consisting of an ultrathin Al2O3 film and a thicker PECVD-SiOx layer. Internal quantum efficiency measurements reveal that the effective rear surface recombination velocities of the single-layer Al2O 3-passivated cells are comparable to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al2O3/SiOx-passivated cells are even lower. Very low effective rear surface recombination velocities of only 70 cm/s are reported for the Al2O3/SiOx stacks, including metalized areas on the cell rear.
AB - We present independently confirmed efficiencies above 20% for PERC-type solar cells with the point-contacted rear being either passivated by atomic-layer-deposited Al2O3 or by stacks consisting of an ultrathin Al2O3 film and a thicker PECVD-SiOx layer. Internal quantum efficiency measurements reveal that the effective rear surface recombination velocities of the single-layer Al2O 3-passivated cells are comparable to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al2O3/SiOx-passivated cells are even lower. Very low effective rear surface recombination velocities of only 70 cm/s are reported for the Al2O3/SiOx stacks, including metalized areas on the cell rear.
UR - http://www.scopus.com/inward/record.url?scp=84862898678&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922636
DO - 10.1109/PVSC.2008.4922636
M3 - Conference contribution
AN - SCOPUS:84862898678
SN - 978-1-4244-1640-0
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -