Atomic layer deposition of Gd2O3 and Dy2O3: A study of the ALD Characteristics and Structural and Electrical Properties

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Ke Xu
  • Ramdurai Ranjith
  • Apurba Laha
  • Harish Parala
  • Andrian P. Milanov
  • Roland A. Fischer
  • Eberhard Bugiel
  • Jürgen Feydt
  • Stefan Irsen
  • Teodor Toader
  • Claudia Bock
  • Detlef Rogalla
  • Hans Jörg Osten
  • Ulrich Kunze
  • Anjana Devi

External Research Organisations

  • Ruhr-Universität Bochum
  • research center caesar
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Details

Original languageEnglish
Pages (from-to)651-658
Number of pages8
JournalChemistry of materials
Volume24
Issue number4
Early online date10 Feb 2012
Publication statusPublished - 28 Feb 2012

Abstract

Gd 2O 3 and Dy 2O 3 thin films were grown by atomic layer deposition (ALD) on Si(100) substrates using the homoleptic rare earth guanidinate based precursors, namely, tris(N,N′- diisopropyl-2-dimethylamido-guanidinato)gadolinium(III) [Gd(DPDMG) 3] (1) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato)dysprosium(III) [Dy(DPDMG) 3] (2), respectively. Both complexes are volatile and exhibit high reactivity and good thermal stability, which are ideal characteristics of a good ALD precursor. Thin Gd 2O 3 and Dy 2O 3 layers were grown by ALD, where the precursors were used in combination with water as a reactant at reduced pressure at the substrate temperature ranging from 150 °C to 350 °C. A constant growth per cycle (GPC) of 1.1 Å was obtained at deposition temperatures between 175 and 275 °C for Gd 2O 3, and in the case of Dy 2O 3, a GPC of 1.0 Å was obtained at 200-275 °C. The self-limiting ALD growth characteristics and the saturation behavior of the precursors were confirmed at substrate temperatures of 225 and 250 °C within the ALD window for both Gd 2O 3 and Dy 2O 3. Thin films were structurally characterized by grazing incidence X-ray diffraction (GI-XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses for crystallinity and morphology. The chemical composition of the layer was examined by Rutherford backscattering (RBS) analysis and Auger electron spectroscopy (AES) depth profile measurements. The electrical properties of the ALD grown layers were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Upon subjection to a forming gas treatment, the ALD grown layers show promising dielectric behavior, with no hysteresis and reduced interface trap densities, thus revealing the potential of these layers as high-k oxide for application in complementary metal oxide semiconductor based devices.

Keywords

    atomic layer deposition, electrical properties, morphology, rare earth oxides, structure

ASJC Scopus subject areas

Cite this

Atomic layer deposition of Gd2O3 and Dy2O3: A study of the ALD Characteristics and Structural and Electrical Properties. / Xu, Ke; Ranjith, Ramdurai; Laha, Apurba et al.
In: Chemistry of materials, Vol. 24, No. 4, 28.02.2012, p. 651-658.

Research output: Contribution to journalArticleResearchpeer review

Xu, K, Ranjith, R, Laha, A, Parala, H, Milanov, AP, Fischer, RA, Bugiel, E, Feydt, J, Irsen, S, Toader, T, Bock, C, Rogalla, D, Osten, HJ, Kunze, U & Devi, A 2012, 'Atomic layer deposition of Gd2O3 and Dy2O3: A study of the ALD Characteristics and Structural and Electrical Properties', Chemistry of materials, vol. 24, no. 4, pp. 651-658. https://doi.org/10.1021/cm2020862
Xu, K., Ranjith, R., Laha, A., Parala, H., Milanov, A. P., Fischer, R. A., Bugiel, E., Feydt, J., Irsen, S., Toader, T., Bock, C., Rogalla, D., Osten, H. J., Kunze, U., & Devi, A. (2012). Atomic layer deposition of Gd2O3 and Dy2O3: A study of the ALD Characteristics and Structural and Electrical Properties. Chemistry of materials, 24(4), 651-658. https://doi.org/10.1021/cm2020862
Xu K, Ranjith R, Laha A, Parala H, Milanov AP, Fischer RA et al. Atomic layer deposition of Gd2O3 and Dy2O3: A study of the ALD Characteristics and Structural and Electrical Properties. Chemistry of materials. 2012 Feb 28;24(4):651-658. Epub 2012 Feb 10. doi: 10.1021/cm2020862
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title = "Atomic layer deposition of Gd2O3 and Dy2O3: A study of the ALD Characteristics and Structural and Electrical Properties",
abstract = "Gd 2O 3 and Dy 2O 3 thin films were grown by atomic layer deposition (ALD) on Si(100) substrates using the homoleptic rare earth guanidinate based precursors, namely, tris(N,N′- diisopropyl-2-dimethylamido-guanidinato)gadolinium(III) [Gd(DPDMG) 3] (1) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato)dysprosium(III) [Dy(DPDMG) 3] (2), respectively. Both complexes are volatile and exhibit high reactivity and good thermal stability, which are ideal characteristics of a good ALD precursor. Thin Gd 2O 3 and Dy 2O 3 layers were grown by ALD, where the precursors were used in combination with water as a reactant at reduced pressure at the substrate temperature ranging from 150 °C to 350 °C. A constant growth per cycle (GPC) of 1.1 {\AA} was obtained at deposition temperatures between 175 and 275 °C for Gd 2O 3, and in the case of Dy 2O 3, a GPC of 1.0 {\AA} was obtained at 200-275 °C. The self-limiting ALD growth characteristics and the saturation behavior of the precursors were confirmed at substrate temperatures of 225 and 250 °C within the ALD window for both Gd 2O 3 and Dy 2O 3. Thin films were structurally characterized by grazing incidence X-ray diffraction (GI-XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses for crystallinity and morphology. The chemical composition of the layer was examined by Rutherford backscattering (RBS) analysis and Auger electron spectroscopy (AES) depth profile measurements. The electrical properties of the ALD grown layers were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Upon subjection to a forming gas treatment, the ALD grown layers show promising dielectric behavior, with no hysteresis and reduced interface trap densities, thus revealing the potential of these layers as high-k oxide for application in complementary metal oxide semiconductor based devices.",
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Download

TY - JOUR

T1 - Atomic layer deposition of Gd2O3 and Dy2O3

T2 - A study of the ALD Characteristics and Structural and Electrical Properties

AU - Xu, Ke

AU - Ranjith, Ramdurai

AU - Laha, Apurba

AU - Parala, Harish

AU - Milanov, Andrian P.

AU - Fischer, Roland A.

AU - Bugiel, Eberhard

AU - Feydt, Jürgen

AU - Irsen, Stefan

AU - Toader, Teodor

AU - Bock, Claudia

AU - Rogalla, Detlef

AU - Osten, Hans Jörg

AU - Kunze, Ulrich

AU - Devi, Anjana

PY - 2012/2/28

Y1 - 2012/2/28

N2 - Gd 2O 3 and Dy 2O 3 thin films were grown by atomic layer deposition (ALD) on Si(100) substrates using the homoleptic rare earth guanidinate based precursors, namely, tris(N,N′- diisopropyl-2-dimethylamido-guanidinato)gadolinium(III) [Gd(DPDMG) 3] (1) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato)dysprosium(III) [Dy(DPDMG) 3] (2), respectively. Both complexes are volatile and exhibit high reactivity and good thermal stability, which are ideal characteristics of a good ALD precursor. Thin Gd 2O 3 and Dy 2O 3 layers were grown by ALD, where the precursors were used in combination with water as a reactant at reduced pressure at the substrate temperature ranging from 150 °C to 350 °C. A constant growth per cycle (GPC) of 1.1 Å was obtained at deposition temperatures between 175 and 275 °C for Gd 2O 3, and in the case of Dy 2O 3, a GPC of 1.0 Å was obtained at 200-275 °C. The self-limiting ALD growth characteristics and the saturation behavior of the precursors were confirmed at substrate temperatures of 225 and 250 °C within the ALD window for both Gd 2O 3 and Dy 2O 3. Thin films were structurally characterized by grazing incidence X-ray diffraction (GI-XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses for crystallinity and morphology. The chemical composition of the layer was examined by Rutherford backscattering (RBS) analysis and Auger electron spectroscopy (AES) depth profile measurements. The electrical properties of the ALD grown layers were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Upon subjection to a forming gas treatment, the ALD grown layers show promising dielectric behavior, with no hysteresis and reduced interface trap densities, thus revealing the potential of these layers as high-k oxide for application in complementary metal oxide semiconductor based devices.

AB - Gd 2O 3 and Dy 2O 3 thin films were grown by atomic layer deposition (ALD) on Si(100) substrates using the homoleptic rare earth guanidinate based precursors, namely, tris(N,N′- diisopropyl-2-dimethylamido-guanidinato)gadolinium(III) [Gd(DPDMG) 3] (1) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato)dysprosium(III) [Dy(DPDMG) 3] (2), respectively. Both complexes are volatile and exhibit high reactivity and good thermal stability, which are ideal characteristics of a good ALD precursor. Thin Gd 2O 3 and Dy 2O 3 layers were grown by ALD, where the precursors were used in combination with water as a reactant at reduced pressure at the substrate temperature ranging from 150 °C to 350 °C. A constant growth per cycle (GPC) of 1.1 Å was obtained at deposition temperatures between 175 and 275 °C for Gd 2O 3, and in the case of Dy 2O 3, a GPC of 1.0 Å was obtained at 200-275 °C. The self-limiting ALD growth characteristics and the saturation behavior of the precursors were confirmed at substrate temperatures of 225 and 250 °C within the ALD window for both Gd 2O 3 and Dy 2O 3. Thin films were structurally characterized by grazing incidence X-ray diffraction (GI-XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses for crystallinity and morphology. The chemical composition of the layer was examined by Rutherford backscattering (RBS) analysis and Auger electron spectroscopy (AES) depth profile measurements. The electrical properties of the ALD grown layers were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Upon subjection to a forming gas treatment, the ALD grown layers show promising dielectric behavior, with no hysteresis and reduced interface trap densities, thus revealing the potential of these layers as high-k oxide for application in complementary metal oxide semiconductor based devices.

KW - atomic layer deposition

KW - electrical properties

KW - morphology

KW - rare earth oxides

KW - structure

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