Details
| Original language | English |
|---|---|
| Pages (from-to) | 3939-3946 |
| Number of pages | 8 |
| Journal | Journal of Materials Chemistry C |
| Volume | 1 |
| Issue number | 25 |
| Early online date | 17 Apr 2013 |
| Publication status | Published - 7 Jul 2013 |
Abstract
For the first time, the combination of the homoleptic erbium tris-guanidinate metalorganic complex ([Er(NMe2-Guan)3]) simply with water yielded high quality Er2O3 thin films on Si(100) substrates employing the atomic layer deposition (ALD) process. The process optimization to grow good quality Er2O3 layers was performed by varying the Er precursor pulse time, water pulse time and purge time. The high reactivity of the Er compound towards water and good thermal stability in the temperature range of 150-275°C (ALD window) resulted in homogeneous, stoichiometric Er2O3 layers with high growth rates (1.1 Å per cycle) and the as-deposited films crystallized in the cubic phase. The saturation behavior at different temperatures in the ALD window and the linear dependence of film thickness as a function of precursor pulse time confirmed the true ALD process. The potential of Er2O 3 thin films as gate dielectrics was verified by performing capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-13 for layers of different thicknesses (15-30 nm).
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of Materials Chemistry C, Vol. 1, No. 25, 07.07.2013, p. 3939-3946.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water
T2 - Process optimization, film analysis and electrical properties
AU - Xu, Ke
AU - Chaudhuri, Ayan Roy
AU - Parala, Harish
AU - Schwendt, Dominik
AU - Arcos, Teresa De Los
AU - Osten, H. Jörg
AU - Devi, Anjana
PY - 2013/7/7
Y1 - 2013/7/7
N2 - For the first time, the combination of the homoleptic erbium tris-guanidinate metalorganic complex ([Er(NMe2-Guan)3]) simply with water yielded high quality Er2O3 thin films on Si(100) substrates employing the atomic layer deposition (ALD) process. The process optimization to grow good quality Er2O3 layers was performed by varying the Er precursor pulse time, water pulse time and purge time. The high reactivity of the Er compound towards water and good thermal stability in the temperature range of 150-275°C (ALD window) resulted in homogeneous, stoichiometric Er2O3 layers with high growth rates (1.1 Å per cycle) and the as-deposited films crystallized in the cubic phase. The saturation behavior at different temperatures in the ALD window and the linear dependence of film thickness as a function of precursor pulse time confirmed the true ALD process. The potential of Er2O 3 thin films as gate dielectrics was verified by performing capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-13 for layers of different thicknesses (15-30 nm).
AB - For the first time, the combination of the homoleptic erbium tris-guanidinate metalorganic complex ([Er(NMe2-Guan)3]) simply with water yielded high quality Er2O3 thin films on Si(100) substrates employing the atomic layer deposition (ALD) process. The process optimization to grow good quality Er2O3 layers was performed by varying the Er precursor pulse time, water pulse time and purge time. The high reactivity of the Er compound towards water and good thermal stability in the temperature range of 150-275°C (ALD window) resulted in homogeneous, stoichiometric Er2O3 layers with high growth rates (1.1 Å per cycle) and the as-deposited films crystallized in the cubic phase. The saturation behavior at different temperatures in the ALD window and the linear dependence of film thickness as a function of precursor pulse time confirmed the true ALD process. The potential of Er2O 3 thin films as gate dielectrics was verified by performing capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-13 for layers of different thicknesses (15-30 nm).
UR - http://www.scopus.com/inward/record.url?scp=84880152913&partnerID=8YFLogxK
U2 - 10.1039/c3tc30401a
DO - 10.1039/c3tc30401a
M3 - Article
AN - SCOPUS:84880152913
VL - 1
SP - 3939
EP - 3946
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7534
IS - 25
ER -