Details
| Original language | English |
|---|---|
| Pages (from-to) | 2409-2414 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 48 |
| Issue number | 12 |
| Publication status | Published - 2000 |
Abstract
This paper investigates the properties of asymmetric coupled lines built in a 0.254tm CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. We also demonstrate by measurement and calculation that the two fundamental modes of the coupled-line system share significant cross power. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported.
Keywords
- Coupled mode analysis, Integrated circuit interconnections, Measurement, Multiconductor transmission line, Parameter estimation, Silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Radiation
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 12, 2000, p. 2409-2414.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Asymmetric coupled cmos lines-an experimental study
AU - Arz, Uwe
AU - Williams, Dylan F.
AU - Walker, David K.
AU - Grabinski, Hartmut
PY - 2000
Y1 - 2000
N2 - This paper investigates the properties of asymmetric coupled lines built in a 0.254tm CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. We also demonstrate by measurement and calculation that the two fundamental modes of the coupled-line system share significant cross power. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported.
AB - This paper investigates the properties of asymmetric coupled lines built in a 0.254tm CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. We also demonstrate by measurement and calculation that the two fundamental modes of the coupled-line system share significant cross power. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported.
KW - Coupled mode analysis
KW - Integrated circuit interconnections
KW - Measurement
KW - Multiconductor transmission line
KW - Parameter estimation
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0034429010&partnerID=8YFLogxK
U2 - 10.1109/22.898991
DO - 10.1109/22.898991
M3 - Article
AN - SCOPUS:0034429010
VL - 48
SP - 2409
EP - 2414
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 12
ER -