Details
| Original language | English |
|---|---|
| Pages (from-to) | 4938-4944 |
| Number of pages | 7 |
| Journal | Journal of applied physics |
| Volume | 82 |
| Issue number | 10 |
| Publication status | Published - 15 Nov 1997 |
| Externally published | Yes |
Abstract
In traditional band-to-band Auger recombination theory, the low-injection carrier lifetime is an inverse quadratic function of the doping density. However, for doping densities below about 3 × 1018cm-3, the low-injection Auger lifetimes measured in the past on silicon were significantly smaller than predicted by this theory. Recently, a new theory has been developed [A. Hangleiter and R. Häcker Phys. Rev. Lett. 65, 215 (1990)] that attributes these deviations to Coulombic interactions between mobile charge carriers. This theory has been supported experimentally to a high degree of accuracy in n-type silicon; however, no satisfactory support for it has been found in p-type silicon for doping densities below 3×1017 cm-3. In this work, we investigate the most recent lifetime measurements of crystalline silicon and support experimentally the Coulomb-enhanced Auger theory in p-type silicon in the doping range down to 1×1016 cm-3. Based on the experimental data, we present an empirical parameterisation of the low-injection Auger lifetime. This parameterisation is valid in n- and p-type silicon with arbitrary doping concentrations and for temperatures between 70 and 400 K. We implement this parameterisation into a numerical device simulator to demonstrate how the new Auger limit influences the open-circuit voltage capability of silicon solar cells. Further, we briefly discuss why the Auger recombination rates are less enhanced under high-injection conditions than under low-injection conditions.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 82, No. 10, 15.11.1997, p. 4938-4944.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon
AU - Altermatt, Pietro P.
AU - Schmidt, Jan
AU - Heiser, Gernot
AU - Aberle, Armin G.
PY - 1997/11/15
Y1 - 1997/11/15
N2 - In traditional band-to-band Auger recombination theory, the low-injection carrier lifetime is an inverse quadratic function of the doping density. However, for doping densities below about 3 × 1018cm-3, the low-injection Auger lifetimes measured in the past on silicon were significantly smaller than predicted by this theory. Recently, a new theory has been developed [A. Hangleiter and R. Häcker Phys. Rev. Lett. 65, 215 (1990)] that attributes these deviations to Coulombic interactions between mobile charge carriers. This theory has been supported experimentally to a high degree of accuracy in n-type silicon; however, no satisfactory support for it has been found in p-type silicon for doping densities below 3×1017 cm-3. In this work, we investigate the most recent lifetime measurements of crystalline silicon and support experimentally the Coulomb-enhanced Auger theory in p-type silicon in the doping range down to 1×1016 cm-3. Based on the experimental data, we present an empirical parameterisation of the low-injection Auger lifetime. This parameterisation is valid in n- and p-type silicon with arbitrary doping concentrations and for temperatures between 70 and 400 K. We implement this parameterisation into a numerical device simulator to demonstrate how the new Auger limit influences the open-circuit voltage capability of silicon solar cells. Further, we briefly discuss why the Auger recombination rates are less enhanced under high-injection conditions than under low-injection conditions.
AB - In traditional band-to-band Auger recombination theory, the low-injection carrier lifetime is an inverse quadratic function of the doping density. However, for doping densities below about 3 × 1018cm-3, the low-injection Auger lifetimes measured in the past on silicon were significantly smaller than predicted by this theory. Recently, a new theory has been developed [A. Hangleiter and R. Häcker Phys. Rev. Lett. 65, 215 (1990)] that attributes these deviations to Coulombic interactions between mobile charge carriers. This theory has been supported experimentally to a high degree of accuracy in n-type silicon; however, no satisfactory support for it has been found in p-type silicon for doping densities below 3×1017 cm-3. In this work, we investigate the most recent lifetime measurements of crystalline silicon and support experimentally the Coulomb-enhanced Auger theory in p-type silicon in the doping range down to 1×1016 cm-3. Based on the experimental data, we present an empirical parameterisation of the low-injection Auger lifetime. This parameterisation is valid in n- and p-type silicon with arbitrary doping concentrations and for temperatures between 70 and 400 K. We implement this parameterisation into a numerical device simulator to demonstrate how the new Auger limit influences the open-circuit voltage capability of silicon solar cells. Further, we briefly discuss why the Auger recombination rates are less enhanced under high-injection conditions than under low-injection conditions.
UR - http://www.scopus.com/inward/record.url?scp=0000220982&partnerID=8YFLogxK
U2 - 10.1063/1.366360
DO - 10.1063/1.366360
M3 - Article
AN - SCOPUS:0000220982
VL - 82
SP - 4938
EP - 4944
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 10
ER -