Details
| Original language | English |
|---|---|
| Article number | 7073656 |
| Pages (from-to) | 1550-1559 |
| Number of pages | 10 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 50 |
| Issue number | 7 |
| Publication status | Published - 1 Jul 2015 |
| Externally published | Yes |
Abstract
For area reasons, NMOS transistors are preferred over PMOS for the pull-up path in gate drivers. Bootstrapping has to ensure sufficient NMOS gate overdrive. Especially in high-current gate drivers with large transistors, the bootstrap capacitor is too large for integration. This paper proposes three options of fully integrated bootstrap circuits. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and ensures high charge allocation when the driver turns on. A capacitor sizing guideline and the overall driver implementation including a suitable charge pump for permanent driver activation is provided. A linear regulator is used for bootstrap supply and it also compensates the voltage drop of the bootstrap diode. Measurements from a testchip in 180 nm high-voltage BiCMOS confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit with two stacked 75.8 pF and 18.9 pF capacitors results in an expected voltage dip of lower than 1 V. Both bootstrap capacitors require 70% less area compared to a conventional bootstrap circuit. Besides drivers, the proposed bootstrap can also be directly applied to power stages to achieve fully integrated switched mode power supplies or class-D output stages.
Keywords
- Bootstrap circuit, class-D output stage, CMOS integrated circuits, CMOS output stage, driver circuits, gate driver, high voltage, integrated switched mode power supply, rail-to-rail outputs, switching converters
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Journal of Solid-State Circuits, Vol. 50, No. 7, 7073656, 01.07.2015, p. 1550-1559.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Area efficient integrated gate drivers based on high-voltage charge storing
AU - Seidel, Achim
AU - Costa, Marco Salvatore
AU - Joos, Joachim
AU - Wicht, Bernhard
N1 - Publisher Copyright: © 2015 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - For area reasons, NMOS transistors are preferred over PMOS for the pull-up path in gate drivers. Bootstrapping has to ensure sufficient NMOS gate overdrive. Especially in high-current gate drivers with large transistors, the bootstrap capacitor is too large for integration. This paper proposes three options of fully integrated bootstrap circuits. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and ensures high charge allocation when the driver turns on. A capacitor sizing guideline and the overall driver implementation including a suitable charge pump for permanent driver activation is provided. A linear regulator is used for bootstrap supply and it also compensates the voltage drop of the bootstrap diode. Measurements from a testchip in 180 nm high-voltage BiCMOS confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit with two stacked 75.8 pF and 18.9 pF capacitors results in an expected voltage dip of lower than 1 V. Both bootstrap capacitors require 70% less area compared to a conventional bootstrap circuit. Besides drivers, the proposed bootstrap can also be directly applied to power stages to achieve fully integrated switched mode power supplies or class-D output stages.
AB - For area reasons, NMOS transistors are preferred over PMOS for the pull-up path in gate drivers. Bootstrapping has to ensure sufficient NMOS gate overdrive. Especially in high-current gate drivers with large transistors, the bootstrap capacitor is too large for integration. This paper proposes three options of fully integrated bootstrap circuits. The key idea is that the main bootstrap capacitor is supported by a second bootstrap capacitor, which is charged to a higher voltage and ensures high charge allocation when the driver turns on. A capacitor sizing guideline and the overall driver implementation including a suitable charge pump for permanent driver activation is provided. A linear regulator is used for bootstrap supply and it also compensates the voltage drop of the bootstrap diode. Measurements from a testchip in 180 nm high-voltage BiCMOS confirm the benefit of high-voltage charge storing. The fully integrated bootstrap circuit with two stacked 75.8 pF and 18.9 pF capacitors results in an expected voltage dip of lower than 1 V. Both bootstrap capacitors require 70% less area compared to a conventional bootstrap circuit. Besides drivers, the proposed bootstrap can also be directly applied to power stages to achieve fully integrated switched mode power supplies or class-D output stages.
KW - Bootstrap circuit
KW - class-D output stage
KW - CMOS integrated circuits
KW - CMOS output stage
KW - driver circuits
KW - gate driver
KW - high voltage
KW - integrated switched mode power supply
KW - rail-to-rail outputs
KW - switching converters
UR - http://www.scopus.com/inward/record.url?scp=85027919964&partnerID=8YFLogxK
U2 - 10.1109/JSSC.2015.2410797
DO - 10.1109/JSSC.2015.2410797
M3 - Article
AN - SCOPUS:85027919964
VL - 50
SP - 1550
EP - 1559
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
SN - 0018-9200
IS - 7
M1 - 7073656
ER -