Details
| Original language | English |
|---|---|
| Article number | 045401 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 82 |
| Issue number | 4 |
| Publication status | Published - 1 Jul 2010 |
Abstract
We correlate in this study the growth of Pb films on the stepped Si(557) surface at temperatures of 70 K, studied by low-energy electron diffraction, with the properties of electronic transport, measured by a macroscopic four-point probe technique. Despite a large lattice mismatch, layer-by-layer growth is observed, as most obvious from the characteristic oscillations in conductance with layer periodicity, incipient with the first monolayer both along and across the step direction. These findings demonstrate that lateral misfits (here almost 10%) in heteroepitaxial systems can be effectively compensated by substrate steps and can change the growth mode with respect to flat surfaces. While structurally the layers appear to be isotropic starting already with the third layer, anisotropy is seen in transport up to at least six monolayers with functional dependencies of conductance varying with layer thickness and measurement direction. Maxima of conductance oscillations up to five monolayers do not coincide with completion of individual layers. They are characteristic for the close coupling of structure and quantum effects.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 4, 045401, 01.07.2010.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Anisotropic conductance oscillations in Pb films on Si(557)
AU - Lükermann, Daniel
AU - Pfnür, Herbert
AU - Tegenkamp, Christoph
PY - 2010/7/1
Y1 - 2010/7/1
N2 - We correlate in this study the growth of Pb films on the stepped Si(557) surface at temperatures of 70 K, studied by low-energy electron diffraction, with the properties of electronic transport, measured by a macroscopic four-point probe technique. Despite a large lattice mismatch, layer-by-layer growth is observed, as most obvious from the characteristic oscillations in conductance with layer periodicity, incipient with the first monolayer both along and across the step direction. These findings demonstrate that lateral misfits (here almost 10%) in heteroepitaxial systems can be effectively compensated by substrate steps and can change the growth mode with respect to flat surfaces. While structurally the layers appear to be isotropic starting already with the third layer, anisotropy is seen in transport up to at least six monolayers with functional dependencies of conductance varying with layer thickness and measurement direction. Maxima of conductance oscillations up to five monolayers do not coincide with completion of individual layers. They are characteristic for the close coupling of structure and quantum effects.
AB - We correlate in this study the growth of Pb films on the stepped Si(557) surface at temperatures of 70 K, studied by low-energy electron diffraction, with the properties of electronic transport, measured by a macroscopic four-point probe technique. Despite a large lattice mismatch, layer-by-layer growth is observed, as most obvious from the characteristic oscillations in conductance with layer periodicity, incipient with the first monolayer both along and across the step direction. These findings demonstrate that lateral misfits (here almost 10%) in heteroepitaxial systems can be effectively compensated by substrate steps and can change the growth mode with respect to flat surfaces. While structurally the layers appear to be isotropic starting already with the third layer, anisotropy is seen in transport up to at least six monolayers with functional dependencies of conductance varying with layer thickness and measurement direction. Maxima of conductance oscillations up to five monolayers do not coincide with completion of individual layers. They are characteristic for the close coupling of structure and quantum effects.
UR - http://www.scopus.com/inward/record.url?scp=77956541156&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.82.045401
DO - 10.1103/PhysRevB.82.045401
M3 - Article
AN - SCOPUS:77956541156
VL - 82
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 4
M1 - 045401
ER -