Details
| Original language | English |
|---|---|
| Pages (from-to) | 372-380 |
| Number of pages | 9 |
| Journal | Journal of crystal growth |
| Volume | 180 |
| Issue number | 3-4 |
| Publication status | Published - Oct 1997 |
Abstract
A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100 mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized lateral resistivity distribution in the single crystal. The calculated resistivity distributions are compared with lateral spreading resistivity measurements in the single crystal.
Keywords
- Dopant concentration field, Finite-element method, Floating zone growth, Si crystal
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 180, No. 3-4, 10.1997, p. 372-380.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals
AU - Mühlbauer, A.
AU - Muiznieks, A.
AU - Virbulis, J.
N1 - Funding Information: The authors are grateful for the support received from the Institute of Crystal Growth, Berlin, Germany for the experimental resistivity measurements. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1997/10
Y1 - 1997/10
N2 - A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100 mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized lateral resistivity distribution in the single crystal. The calculated resistivity distributions are compared with lateral spreading resistivity measurements in the single crystal.
AB - A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100 mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized lateral resistivity distribution in the single crystal. The calculated resistivity distributions are compared with lateral spreading resistivity measurements in the single crystal.
KW - Dopant concentration field
KW - Finite-element method
KW - Floating zone growth
KW - Si crystal
UR - http://www.scopus.com/inward/record.url?scp=0031244663&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(97)00235-2
DO - 10.1016/S0022-0248(97)00235-2
M3 - Article
AN - SCOPUS:0031244663
VL - 180
SP - 372
EP - 380
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 3-4
ER -