Details
| Original language | English |
|---|---|
| Title of host publication | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
| Editors | K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski |
| Pages | 919-922 |
| Number of pages | 4 |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Publication series
| Name | Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Volume | A |
Abstract
The activation of the metastable defect in boron-doped Cz-Si is analyzed by application of small forward voltages to Cz-Si cells in the dark. In contrast to the carrier injection by light used in previous experiments, this method allows to observe the defect activation at very low excess carrier densities. Thus, the minimum level of excess carriers necessary to activate the metastable defect could be determined for the first time. This threshold value was measured for materials with different boron concentrations at different temperatures. Our analysis allows to decide that the defect activation is not due to a shift of the Fermi-level across a certain defect energy level, changing its charge state, but due to a recombination-enhanced activation of the defect.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 919-922 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Analysis of the defect activation in CZ-silicon by temperature-dependent bias-induced degradation of solar cells
AU - Glunz, S. W.
AU - Schäffer, E.
AU - Rein, S.
AU - Bothe, K.
AU - Schmidt, J.
PY - 2003
Y1 - 2003
N2 - The activation of the metastable defect in boron-doped Cz-Si is analyzed by application of small forward voltages to Cz-Si cells in the dark. In contrast to the carrier injection by light used in previous experiments, this method allows to observe the defect activation at very low excess carrier densities. Thus, the minimum level of excess carriers necessary to activate the metastable defect could be determined for the first time. This threshold value was measured for materials with different boron concentrations at different temperatures. Our analysis allows to decide that the defect activation is not due to a shift of the Fermi-level across a certain defect energy level, changing its charge state, but due to a recombination-enhanced activation of the defect.
AB - The activation of the metastable defect in boron-doped Cz-Si is analyzed by application of small forward voltages to Cz-Si cells in the dark. In contrast to the carrier injection by light used in previous experiments, this method allows to observe the defect activation at very low excess carrier densities. Thus, the minimum level of excess carriers necessary to activate the metastable defect could be determined for the first time. This threshold value was measured for materials with different boron concentrations at different temperatures. Our analysis allows to decide that the defect activation is not due to a shift of the Fermi-level across a certain defect energy level, changing its charge state, but due to a recombination-enhanced activation of the defect.
UR - http://www.scopus.com/inward/record.url?scp=6344240819&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6344240819
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 919
EP - 922
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - 3rd World Conference on Photovoltaic Energy Conversion
Y2 - 11 May 2003 through 18 May 2003
ER -