Details
| Original language | English |
|---|---|
| Title of host publication | 2020 22nd European Conference on Power Electronics and Applications |
| Subtitle of host publication | EPE 2020 ECCE Europe |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 9789075815368 |
| Publication status | Published - Sept 2020 |
| Event | 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe - Lyon, France Duration: 7 Sept 2020 → 11 Sept 2020 |
Abstract
Parasitic elements and mutual couplings of SiC half-bridge modules strongly affect the switching characteristics of devices. They excite overshoots and oscillations that further contribute to increased EMI emissions. This paper will explain and analyze such effects on the switching performance and EMI emissions, based on 3D FEM models of the module. It can be said that knowledge about the effects of parasitic elements and mutual couplings on the switching behavior is an important basis for the design guidelines of fast switching wide-bandgap (WBG) power converters. A three-phase DC-AC inverter prototype with three SiC half-bridge MOSFET modules and an EMI measurement test setup are constructed for the experiments. The experiments results are validated with simulation results.
Keywords
- EMI, Inductance, Inverter, Mutual couplings, Parasitic, Parasitic capacitance, Silicon Carbide (SiC)
ASJC Scopus subject areas
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Mathematics(all)
- Control and Optimization
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2020 22nd European Conference on Power Electronics and Applications: EPE 2020 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2020. 9215600.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Analysis of Switching Performance and EMI Emission of SiC Inverters under the Influence of Parasitic Elements and Mutual Couplings of the Power Modules
AU - Ali, Mohammad
AU - Muller, Jan Kaspar
AU - Friebe, Jens
AU - Mertens, Axel
N1 - Funding information: This work was supported by the German Ministry of Economics and Technology - 19236 N (FVA).
PY - 2020/9
Y1 - 2020/9
N2 - Parasitic elements and mutual couplings of SiC half-bridge modules strongly affect the switching characteristics of devices. They excite overshoots and oscillations that further contribute to increased EMI emissions. This paper will explain and analyze such effects on the switching performance and EMI emissions, based on 3D FEM models of the module. It can be said that knowledge about the effects of parasitic elements and mutual couplings on the switching behavior is an important basis for the design guidelines of fast switching wide-bandgap (WBG) power converters. A three-phase DC-AC inverter prototype with three SiC half-bridge MOSFET modules and an EMI measurement test setup are constructed for the experiments. The experiments results are validated with simulation results.
AB - Parasitic elements and mutual couplings of SiC half-bridge modules strongly affect the switching characteristics of devices. They excite overshoots and oscillations that further contribute to increased EMI emissions. This paper will explain and analyze such effects on the switching performance and EMI emissions, based on 3D FEM models of the module. It can be said that knowledge about the effects of parasitic elements and mutual couplings on the switching behavior is an important basis for the design guidelines of fast switching wide-bandgap (WBG) power converters. A three-phase DC-AC inverter prototype with three SiC half-bridge MOSFET modules and an EMI measurement test setup are constructed for the experiments. The experiments results are validated with simulation results.
KW - EMI
KW - Inductance
KW - Inverter
KW - Mutual couplings
KW - Parasitic
KW - Parasitic capacitance
KW - Silicon Carbide (SiC)
UR - http://www.scopus.com/inward/record.url?scp=85094877238&partnerID=8YFLogxK
U2 - 10.23919/epe20ecceeurope43536.2020.9215600
DO - 10.23919/epe20ecceeurope43536.2020.9215600
M3 - Conference contribution
AN - SCOPUS:85094877238
BT - 2020 22nd European Conference on Power Electronics and Applications
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Y2 - 7 September 2020 through 11 September 2020
ER -