Details
| Original language | English |
|---|---|
| Article number | 6838961 |
| Pages (from-to) | 1169-1176 |
| Number of pages | 8 |
| Journal | IEEE journal of photovoltaics |
| Volume | 4 |
| Issue number | 5 |
| Publication status | Published - Sept 2014 |
Abstract
We present an experimental method to quantify the series resistance R a-Si/ITO through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize Ra-Si/ITO, we apply different a-Si:H and ITO deposition parameters. We find the best value for R (p)-a-Si/ITO of 0.42 Ω·cm2 for an ITO double layer with a 10-nm-thin starting layer that provides good contact resistance and an additional 90-nm top layer that provides good conductivity. For R (n)-a-Si/ITO , we reach values below 0.1 Ω·cm 2. We present an analysis of the series resistance and shading losses of our 100-cm2 bifacial screen-printed a-Si:H/c-Si heterojunction solar cells, which show an open-circuit voltage of Voc = 733 mV, demonstrating the excellent level of interface passivation. The efficiency of 20.2% is limited by a low short-circuit current density of 37.1 mA/cm 2 and fill factor of 76%.
Keywords
- Amorphous silicon, series resistance, silicon heterojunction solar cells
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 4, No. 5, 6838961, 09.2014, p. 1169-1176.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Analysis of series resistance losses in a-Si:H/c-Si heterojunction solar cells
AU - Gogolin, Ralf
AU - Turcu, Mircea
AU - Ferre, Rafel
AU - Harder, Nils Peter
AU - Brendel, Rolf
AU - Schmidt, Jan
PY - 2014/9
Y1 - 2014/9
N2 - We present an experimental method to quantify the series resistance R a-Si/ITO through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize Ra-Si/ITO, we apply different a-Si:H and ITO deposition parameters. We find the best value for R (p)-a-Si/ITO of 0.42 Ω·cm2 for an ITO double layer with a 10-nm-thin starting layer that provides good contact resistance and an additional 90-nm top layer that provides good conductivity. For R (n)-a-Si/ITO , we reach values below 0.1 Ω·cm 2. We present an analysis of the series resistance and shading losses of our 100-cm2 bifacial screen-printed a-Si:H/c-Si heterojunction solar cells, which show an open-circuit voltage of Voc = 733 mV, demonstrating the excellent level of interface passivation. The efficiency of 20.2% is limited by a low short-circuit current density of 37.1 mA/cm 2 and fill factor of 76%.
AB - We present an experimental method to quantify the series resistance R a-Si/ITO through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize Ra-Si/ITO, we apply different a-Si:H and ITO deposition parameters. We find the best value for R (p)-a-Si/ITO of 0.42 Ω·cm2 for an ITO double layer with a 10-nm-thin starting layer that provides good contact resistance and an additional 90-nm top layer that provides good conductivity. For R (n)-a-Si/ITO , we reach values below 0.1 Ω·cm 2. We present an analysis of the series resistance and shading losses of our 100-cm2 bifacial screen-printed a-Si:H/c-Si heterojunction solar cells, which show an open-circuit voltage of Voc = 733 mV, demonstrating the excellent level of interface passivation. The efficiency of 20.2% is limited by a low short-circuit current density of 37.1 mA/cm 2 and fill factor of 76%.
KW - Amorphous silicon
KW - series resistance
KW - silicon heterojunction solar cells
UR - http://www.scopus.com/inward/record.url?scp=84906788585&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2014.2328575
DO - 10.1109/JPHOTOV.2014.2328575
M3 - Article
AN - SCOPUS:84906788585
VL - 4
SP - 1169
EP - 1176
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 5
M1 - 6838961
ER -