Details
| Original language | English |
|---|---|
| Pages (from-to) | 318-323 |
| Number of pages | 6 |
| Journal | Energy Procedia |
| Volume | 8 |
| Early online date | 12 Aug 2011 |
| Publication status | Published - 2011 |
Abstract
In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance decay measurements on test wafers with various contact geometries and compare two different aluminum pastes. The aluminum paste which is optimized for local contacts shows a deep and uniform local back surface field that results in Smet = 600 cm/s on 1.5 Ωcm p-type silicon. In contrast, a standard Al paste for full-area metallization shows a nonuniform back surface field and a Smet of 2000 cm/s on the same material. We achieve an area-averaged rear surface recombination velocity S rear = (65 ± 20) cm/s for line contacts with a pitch of 2 mm. The application of the optimized paste to screen-printed solar cells with dielectric surface passivation results in efficiencies of up to 19.2 % with a Voc = 655 mV and a Jsc = 38.4 mA/cm2 on 125×125 mm2 p-type Cz silicon wafers. The internal quantum efficiency analysis reveals Srear = (70 ± 30) cm/s which is in agreement with our lifetime results. Applying fine line screenprinting, efficiencies up to 19.4 % are demonstrated.
Keywords
- Photovoltaics, Silicon, Solar cells, Surface passivation
ASJC Scopus subject areas
- Energy(all)
- General Energy
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In: Energy Procedia, Vol. 8, 2011, p. 318-323.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells
AU - Gatz, S.
AU - Bothe, K.
AU - Müller, J.
AU - Dullweber, T.
AU - Brendel, R.
PY - 2011
Y1 - 2011
N2 - In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance decay measurements on test wafers with various contact geometries and compare two different aluminum pastes. The aluminum paste which is optimized for local contacts shows a deep and uniform local back surface field that results in Smet = 600 cm/s on 1.5 Ωcm p-type silicon. In contrast, a standard Al paste for full-area metallization shows a nonuniform back surface field and a Smet of 2000 cm/s on the same material. We achieve an area-averaged rear surface recombination velocity S rear = (65 ± 20) cm/s for line contacts with a pitch of 2 mm. The application of the optimized paste to screen-printed solar cells with dielectric surface passivation results in efficiencies of up to 19.2 % with a Voc = 655 mV and a Jsc = 38.4 mA/cm2 on 125×125 mm2 p-type Cz silicon wafers. The internal quantum efficiency analysis reveals Srear = (70 ± 30) cm/s which is in agreement with our lifetime results. Applying fine line screenprinting, efficiencies up to 19.4 % are demonstrated.
AB - In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance decay measurements on test wafers with various contact geometries and compare two different aluminum pastes. The aluminum paste which is optimized for local contacts shows a deep and uniform local back surface field that results in Smet = 600 cm/s on 1.5 Ωcm p-type silicon. In contrast, a standard Al paste for full-area metallization shows a nonuniform back surface field and a Smet of 2000 cm/s on the same material. We achieve an area-averaged rear surface recombination velocity S rear = (65 ± 20) cm/s for line contacts with a pitch of 2 mm. The application of the optimized paste to screen-printed solar cells with dielectric surface passivation results in efficiencies of up to 19.2 % with a Voc = 655 mV and a Jsc = 38.4 mA/cm2 on 125×125 mm2 p-type Cz silicon wafers. The internal quantum efficiency analysis reveals Srear = (70 ± 30) cm/s which is in agreement with our lifetime results. Applying fine line screenprinting, efficiencies up to 19.4 % are demonstrated.
KW - Photovoltaics
KW - Silicon
KW - Solar cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=80052087079&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.143
DO - 10.1016/j.egypro.2011.06.143
M3 - Article
AN - SCOPUS:80052087079
VL - 8
SP - 318
EP - 323
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -