Details
| Original language | English |
|---|---|
| Pages (from-to) | L22-L24 |
| Journal | Semiconductor Science and Technology |
| Volume | 17 |
| Issue number | 5 |
| Publication status | Published - 1 May 2002 |
Abstract
Using an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows one to study the Aharonov-Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 17, No. 5, 01.05.2002, p. L22-L24.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Aharonov-Bohm oscillations of a tuneable quantum ring
AU - Keyser, U. F.
AU - Borck, S.
AU - Haug, R. J.
AU - Bichler, M.
AU - Abstreiter, G.
AU - Wegscheider, W.
PY - 2002/5/1
Y1 - 2002/5/1
N2 - Using an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows one to study the Aharonov-Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.
AB - Using an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows one to study the Aharonov-Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.
UR - http://www.scopus.com/inward/record.url?scp=0036566746&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/17/5/103
DO - 10.1088/0268-1242/17/5/103
M3 - Article
AN - SCOPUS:0036566746
VL - 17
SP - L22-L24
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 5
ER -