Details
| Original language | English |
|---|---|
| Pages (from-to) | 73-77 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 8 |
| Issue number | 1-3 SPEC. ISS. |
| Early online date | 19 Oct 2004 |
| Publication status | Published - Feb 2005 |
Abstract
The use of antimony (Sb) as a surfactant allows the growth of relaxed and smooth germanium films with low-defect density on silicon (1 1 1) substrates. We extend the possibilities of surfactant mediated epitaxy (SME) by introducing in situ boron (B) doping, thus enabling the growth of p-type Ge layers on Si(1 1 1). In Sb-SME, a lower p-doping limit in the order of 1×1016 cm-3 for B doping is set by the compensating incorporation of the surfactant Sb during growth. Above this limit, high hole Hall mobilities are reached, up to 1600 cm2/V s for a net p-doping of 1.9×10 16 cm-3. Temperature-dependent Hall measurements show that the hole mobility in p-type Ge layers grown by SME is only limited by ionized impurity scattering of the dopants pointing to high material quality. The structural properties of Ge films grown by SME are characterized by cross-sectional transmission electron microscopy and high-resolution X-ray diffraction. This reveals a complete relaxation and low defect densities. A more detailed study of the Ge/Si(1 1 1) interface shows a regular dislocation array with dislocation lines oriented along the in-plane 〈1̄10〉 directions with a spacing of 8.0 nm. This indicates a practically complete relaxation of the Ge layer by a triangular network of interface misfit dislocations.
Keywords
- Boron, Dislocation array, Germanium, p-Doping, Silicon, Surfactant mediated epitaxy
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Science in Semiconductor Processing, Vol. 8, No. 1-3 SPEC. ISS., 02.2005, p. 73-77.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Advances in surfactant-mediated growth of germanium on silicon
T2 - High-quality p-type Ge films on Si
AU - Wietler, Tobias F.
AU - Ott, André
AU - Bugiel, Eberhard
AU - Hofmann, Karl R.
PY - 2005/2
Y1 - 2005/2
N2 - The use of antimony (Sb) as a surfactant allows the growth of relaxed and smooth germanium films with low-defect density on silicon (1 1 1) substrates. We extend the possibilities of surfactant mediated epitaxy (SME) by introducing in situ boron (B) doping, thus enabling the growth of p-type Ge layers on Si(1 1 1). In Sb-SME, a lower p-doping limit in the order of 1×1016 cm-3 for B doping is set by the compensating incorporation of the surfactant Sb during growth. Above this limit, high hole Hall mobilities are reached, up to 1600 cm2/V s for a net p-doping of 1.9×10 16 cm-3. Temperature-dependent Hall measurements show that the hole mobility in p-type Ge layers grown by SME is only limited by ionized impurity scattering of the dopants pointing to high material quality. The structural properties of Ge films grown by SME are characterized by cross-sectional transmission electron microscopy and high-resolution X-ray diffraction. This reveals a complete relaxation and low defect densities. A more detailed study of the Ge/Si(1 1 1) interface shows a regular dislocation array with dislocation lines oriented along the in-plane 〈1̄10〉 directions with a spacing of 8.0 nm. This indicates a practically complete relaxation of the Ge layer by a triangular network of interface misfit dislocations.
AB - The use of antimony (Sb) as a surfactant allows the growth of relaxed and smooth germanium films with low-defect density on silicon (1 1 1) substrates. We extend the possibilities of surfactant mediated epitaxy (SME) by introducing in situ boron (B) doping, thus enabling the growth of p-type Ge layers on Si(1 1 1). In Sb-SME, a lower p-doping limit in the order of 1×1016 cm-3 for B doping is set by the compensating incorporation of the surfactant Sb during growth. Above this limit, high hole Hall mobilities are reached, up to 1600 cm2/V s for a net p-doping of 1.9×10 16 cm-3. Temperature-dependent Hall measurements show that the hole mobility in p-type Ge layers grown by SME is only limited by ionized impurity scattering of the dopants pointing to high material quality. The structural properties of Ge films grown by SME are characterized by cross-sectional transmission electron microscopy and high-resolution X-ray diffraction. This reveals a complete relaxation and low defect densities. A more detailed study of the Ge/Si(1 1 1) interface shows a regular dislocation array with dislocation lines oriented along the in-plane 〈1̄10〉 directions with a spacing of 8.0 nm. This indicates a practically complete relaxation of the Ge layer by a triangular network of interface misfit dislocations.
KW - Boron
KW - Dislocation array
KW - Germanium
KW - p-Doping
KW - Silicon
KW - Surfactant mediated epitaxy
UR - http://www.scopus.com/inward/record.url?scp=13244267302&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2004.09.077
DO - 10.1016/j.mssp.2004.09.077
M3 - Article
AN - SCOPUS:13244267302
VL - 8
SP - 73
EP - 77
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 1-3 SPEC. ISS.
ER -