Admittance of a quantum point contact

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Original languageEnglish
Pages (from-to)1760-1762
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
Publication statusPublished - 1 Mar 2008

Abstract

The high frequency conductance G of a quantum point contact was studied for f ≤ 300 MHz. While the real part R (G) remains unchanged by frequency we observe a stepwise change of the imaginary part I (G) when adding additional conductance channels. The step height Δ I (G) is linear in frequency with a positive slope and thus has capacitive character with a Δ C per channel of a few fF.

Keywords

    High frequency conductance, Quantum point contact

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Admittance of a quantum point contact. / Hohls, Frank; Fricke, Christian; Haug, Rolf J.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 5, 01.03.2008, p. 1760-1762.

Research output: Contribution to journalArticleResearchpeer review

Hohls F, Fricke C, Haug RJ. Admittance of a quantum point contact. Physica E: Low-Dimensional Systems and Nanostructures. 2008 Mar 1;40(5):1760-1762. doi: 10.1016/j.physe.2007.11.021
Hohls, Frank ; Fricke, Christian ; Haug, Rolf J. / Admittance of a quantum point contact. In: Physica E: Low-Dimensional Systems and Nanostructures. 2008 ; Vol. 40, No. 5. pp. 1760-1762.
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