Details
| Original language | English |
|---|---|
| Pages | 181-184 |
| Number of pages | 4 |
| Publication status | Published - 2000 |
| Event | 9th Topical Meeting on Electrical Performance of Electronic Packaging - Scottsdale, United States Duration: 23 Oct 2000 → 25 Oct 2000 |
Conference
| Conference | 9th Topical Meeting on Electrical Performance of Electronic Packaging |
|---|---|
| Country/Territory | United States |
| City | Scottsdale |
| Period | 23 Oct 2000 → 25 Oct 2000 |
Abstract
In this paper we apply a measurement method designed for asymmetric coupled lines to determine the broadband propagation characteristics of symmetric coupled lines fabricated on a highly conductive silicon substrate. We show that the matrices of frequency-dependent propagation constants and characteristic impedances, as extracted from calibrated four-port S-parameter measurements, agree very well with data predicted by numerical calculations.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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2000. 181-184 Paper presented at 9th Topical Meeting on Electrical Performance of Electronic Packaging, Scottsdale, Arizona, United States.
Research output: Contribution to conference › Paper › Research › peer review
}
TY - CONF
T1 - Accurate electrical measurement of coupled lines on lossy silicon
AU - Arz, Uwe
AU - Williams, Dylan F.
AU - Walker, David K.
AU - Grabinski, Hartmut
PY - 2000
Y1 - 2000
N2 - In this paper we apply a measurement method designed for asymmetric coupled lines to determine the broadband propagation characteristics of symmetric coupled lines fabricated on a highly conductive silicon substrate. We show that the matrices of frequency-dependent propagation constants and characteristic impedances, as extracted from calibrated four-port S-parameter measurements, agree very well with data predicted by numerical calculations.
AB - In this paper we apply a measurement method designed for asymmetric coupled lines to determine the broadband propagation characteristics of symmetric coupled lines fabricated on a highly conductive silicon substrate. We show that the matrices of frequency-dependent propagation constants and characteristic impedances, as extracted from calibrated four-port S-parameter measurements, agree very well with data predicted by numerical calculations.
UR - http://www.scopus.com/inward/record.url?scp=0034497089&partnerID=8YFLogxK
U2 - 10.1109/EPEP.2000.895523
DO - 10.1109/EPEP.2000.895523
M3 - Paper
AN - SCOPUS:0034497089
SP - 181
EP - 184
T2 - 9th Topical Meeting on Electrical Performance of Electronic Packaging
Y2 - 23 October 2000 through 25 October 2000
ER -