A zero external magnetic field quantum standard of resistance at the 10−9 level

Research output: Contribution to journalArticleResearchpeer review

Authors

  • D. K. Patel
  • K. M. Fijalkowski
  • M. Kruskopf
  • N. Liu
  • M. Götz
  • E. Pesel
  • M. Jaime
  • M. Klement
  • S. Schreyeck
  • K. Brunner
  • C. Gould
  • L. W. Molenkamp
  • H. Scherer

External Research Organisations

  • Physikalisch-Technische Bundesanstalt PTB
  • Julius Maximilian University of Würzburg
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Details

Original languageEnglish
Article number075408
JournalNature Electronics
Publication statusPublished - 4 Dec 2024
Externally publishedYes

Abstract

The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (RK = h/e2, where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 ± 8.7) nΩ Ω−1 when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω−1 when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω−1 level (or 10−9 of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.

ASJC Scopus subject areas

Cite this

A zero external magnetic field quantum standard of resistance at the 10−9 level. / Patel, D. K.; Fijalkowski, K. M.; Kruskopf, M. et al.
In: Nature Electronics, 04.12.2024.

Research output: Contribution to journalArticleResearchpeer review

Patel, DK, Fijalkowski, KM, Kruskopf, M, Liu, N, Götz, M, Pesel, E, Jaime, M, Klement, M, Schreyeck, S, Brunner, K, Gould, C, Molenkamp, LW & Scherer, H 2024, 'A zero external magnetic field quantum standard of resistance at the 10−9 level', Nature Electronics. https://doi.org/10.1038/s41928-024-01295-w
Patel, D. K., Fijalkowski, K. M., Kruskopf, M., Liu, N., Götz, M., Pesel, E., Jaime, M., Klement, M., Schreyeck, S., Brunner, K., Gould, C., Molenkamp, L. W., & Scherer, H. (2024). A zero external magnetic field quantum standard of resistance at the 10−9 level. Nature Electronics, Article 075408. https://doi.org/10.1038/s41928-024-01295-w
Patel DK, Fijalkowski KM, Kruskopf M, Liu N, Götz M, Pesel E et al. A zero external magnetic field quantum standard of resistance at the 10−9 level. Nature Electronics. 2024 Dec 4;075408. doi: 10.1038/s41928-024-01295-w
Patel, D. K. ; Fijalkowski, K. M. ; Kruskopf, M. et al. / A zero external magnetic field quantum standard of resistance at the 10−9 level. In: Nature Electronics. 2024.
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AU - Fijalkowski, K. M.

AU - Kruskopf, M.

AU - Liu, N.

AU - Götz, M.

AU - Pesel, E.

AU - Jaime, M.

AU - Klement, M.

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AU - Brunner, K.

AU - Gould, C.

AU - Molenkamp, L. W.

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