Details
| Original language | English |
|---|---|
| Publication status | Published - 15 Mar 2022 |
| Event | DPG-Frühjahrstagungen - Erlangen, Germany Duration: 14 Mar 2022 → 18 Mar 2022 |
Conference
| Conference | DPG-Frühjahrstagungen |
|---|---|
| Country/Territory | Germany |
| City | Erlangen |
| Period | 14 Mar 2022 → 18 Mar 2022 |
Abstract
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2022. Poster session presented at DPG-Frühjahrstagungen, Erlangen, Bavaria, Germany.
Research output: Contribution to conference › Poster › Research
}
TY - CONF
T1 - A symmetric RF X-junction for register-based surface-electrode ion traps compatible with the near-field microwave approach
AU - Ungerechts, Paul Florian
AU - Munoz Carpio, Rodrigo André
AU - Hoffmann, Axel
AU - Kaune, Brigitte Ilse Elisabeth
AU - Meiners, Teresa
AU - Ospelkaus, Christian
PY - 2022/3/15
Y1 - 2022/3/15
N2 - Register-based ion traps are among the leading approaches for scalable quantum processors. A fundamental component of these are junctions that allow the ions to be moved between the specialized zones of the quantum processor via ion transport. We discuss the design and optimization of such a junction and further present a symmetric RF X-junction with a shallow pseudopotential barrier and a substantial trap depth that is feasible for multilayer microfabrication. Furthermore, we present a transition zone making the symmetric RF X-junction compatible with an asymmetric RF near-field microwave gate-zone. Moreover, we present time-dependent transport voltages for reliable multi-zone and through-junction ion transport of a single 9Be+ ion.
AB - Register-based ion traps are among the leading approaches for scalable quantum processors. A fundamental component of these are junctions that allow the ions to be moved between the specialized zones of the quantum processor via ion transport. We discuss the design and optimization of such a junction and further present a symmetric RF X-junction with a shallow pseudopotential barrier and a substantial trap depth that is feasible for multilayer microfabrication. Furthermore, we present a transition zone making the symmetric RF X-junction compatible with an asymmetric RF near-field microwave gate-zone. Moreover, we present time-dependent transport voltages for reliable multi-zone and through-junction ion transport of a single 9Be+ ion.
M3 - Poster
T2 - DPG-Frühjahrstagungen
Y2 - 14 March 2022 through 18 March 2022
ER -