Details
| Original language | English |
|---|---|
| Pages (from-to) | 1545-1548 |
| Number of pages | 4 |
| Journal | Microelectronics reliability |
| Volume | 37 |
| Issue number | 10-11 |
| Publication status | Published - 1997 |
Abstract
For an aluminum-pad test structure the distributions of current density, temperature gradients and mechanical stress were determined by FEM simulations. Based on this results the electro-, thermo- and the stressmigration were calculated. The failure location out of the maximum mass flux divergence was correlated with the reliability characterization of in situ observation in SEM. A very good agreement between measurement and simulation was found.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronics reliability, Vol. 37, No. 10-11, 1997, p. 1545-1548.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A study of the thermal - electrical- and mechanical influence on degradation in an aluminum - pad structure
AU - Yu, X.
AU - Weide, K.
N1 - Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1997
Y1 - 1997
N2 - For an aluminum-pad test structure the distributions of current density, temperature gradients and mechanical stress were determined by FEM simulations. Based on this results the electro-, thermo- and the stressmigration were calculated. The failure location out of the maximum mass flux divergence was correlated with the reliability characterization of in situ observation in SEM. A very good agreement between measurement and simulation was found.
AB - For an aluminum-pad test structure the distributions of current density, temperature gradients and mechanical stress were determined by FEM simulations. Based on this results the electro-, thermo- and the stressmigration were calculated. The failure location out of the maximum mass flux divergence was correlated with the reliability characterization of in situ observation in SEM. A very good agreement between measurement and simulation was found.
UR - http://www.scopus.com/inward/record.url?scp=0031245836&partnerID=8YFLogxK
U2 - 10.1016/S0026-2714(97)00105-4
DO - 10.1016/S0026-2714(97)00105-4
M3 - Article
AN - SCOPUS:0031245836
VL - 37
SP - 1545
EP - 1548
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 10-11
ER -