Details
| Original language | English |
|---|---|
| Article number | 6800058 |
| Pages (from-to) | 841-850 |
| Number of pages | 10 |
| Journal | IEEE journal of photovoltaics |
| Volume | 4 |
| Issue number | 3 |
| Publication status | Published - May 2014 |
Abstract
We present an analytical model for the current transport in polycrystalline (poly)Si/interfacial oxide/monocrystalline (c)-Si base junctions, which consistently describes the symmetrical behavior of an n+ poly-Si emitter/p c -Si base and p+ poly-Si emitter/ n c-Si base configuration. Our model is focused on a regime within which the current transport is possibly dominated by a flow through oxide pinholes rather than by tunneling. For an emitter region assumed to form underneath the interfacial oxide by diffusion of dopants from the poly-Si into the c-Si, we calculate the minority charge carrier distribution and the resistance implied for majority charge carriers. With reasonable parameters, our model simultaneously reproduces the experimentally observed low emitter saturation current densities and low junction resistances values. Our model provides a plausible explanation for the high current gain observed in p-n-p and n-p-n bipolar transistors featuring a poly-Si emitter. In principle, the obtained correlation between recombination current and series resistance is analogous to the situation in a base region of a solar cell with local rear contacts. Thus, a poly-Si/c-Si junction can be explained within the framework of a classical p-n junction picture for a passivated, locally contacted emitter.
Keywords
- Bipolar transistors (BJTs), junctions, photovoltaic cells
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE journal of photovoltaics, Vol. 4, No. 3, 6800058, 05.2014, p. 841-850.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A simple model describing the symmetric I-V characteristics of p polycrystalline Si/n monocrystalline Si, and n polycrystalline Si/p monocrystalline Si junctions
AU - Peibst, Robby
AU - Römer, Udo
AU - Hofmann, Karl Rudiger
AU - Lim, Bianca
AU - Wietler, Tobias F.
AU - Krügener, Jan
AU - Harder, Nils Peter
AU - Brendel, Rolf
PY - 2014/5
Y1 - 2014/5
N2 - We present an analytical model for the current transport in polycrystalline (poly)Si/interfacial oxide/monocrystalline (c)-Si base junctions, which consistently describes the symmetrical behavior of an n+ poly-Si emitter/p c -Si base and p+ poly-Si emitter/ n c-Si base configuration. Our model is focused on a regime within which the current transport is possibly dominated by a flow through oxide pinholes rather than by tunneling. For an emitter region assumed to form underneath the interfacial oxide by diffusion of dopants from the poly-Si into the c-Si, we calculate the minority charge carrier distribution and the resistance implied for majority charge carriers. With reasonable parameters, our model simultaneously reproduces the experimentally observed low emitter saturation current densities and low junction resistances values. Our model provides a plausible explanation for the high current gain observed in p-n-p and n-p-n bipolar transistors featuring a poly-Si emitter. In principle, the obtained correlation between recombination current and series resistance is analogous to the situation in a base region of a solar cell with local rear contacts. Thus, a poly-Si/c-Si junction can be explained within the framework of a classical p-n junction picture for a passivated, locally contacted emitter.
AB - We present an analytical model for the current transport in polycrystalline (poly)Si/interfacial oxide/monocrystalline (c)-Si base junctions, which consistently describes the symmetrical behavior of an n+ poly-Si emitter/p c -Si base and p+ poly-Si emitter/ n c-Si base configuration. Our model is focused on a regime within which the current transport is possibly dominated by a flow through oxide pinholes rather than by tunneling. For an emitter region assumed to form underneath the interfacial oxide by diffusion of dopants from the poly-Si into the c-Si, we calculate the minority charge carrier distribution and the resistance implied for majority charge carriers. With reasonable parameters, our model simultaneously reproduces the experimentally observed low emitter saturation current densities and low junction resistances values. Our model provides a plausible explanation for the high current gain observed in p-n-p and n-p-n bipolar transistors featuring a poly-Si emitter. In principle, the obtained correlation between recombination current and series resistance is analogous to the situation in a base region of a solar cell with local rear contacts. Thus, a poly-Si/c-Si junction can be explained within the framework of a classical p-n junction picture for a passivated, locally contacted emitter.
KW - Bipolar transistors (BJTs)
KW - junctions
KW - photovoltaic cells
UR - http://www.scopus.com/inward/record.url?scp=84899723237&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2014.2310740
DO - 10.1109/jphotov.2014.2310740
M3 - Article
AN - SCOPUS:84899723237
VL - 4
SP - 841
EP - 850
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 3
M1 - 6800058
ER -