A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Leon Fauth
  • Christian Beckemeier
  • Jens Friebe

External Research Organisations

  • Cluster of Excellence SE²A Sustainable and Energy-Efficient Aviation
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Details

Original languageEnglish
Title of host publication2021 IEEE Energy Conversion Congress and Exposition (ECCE)
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1917-1923
Number of pages7
ISBN (electronic)9781728151359, 978-1-7281-6128-0
ISBN (print)978-1-7281-5134-2
Publication statusPublished - 2021
Event13th IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Virtual, Online, Canada
Duration: 10 Oct 202114 Oct 2021

Publication series

NameIEEE Energy Conversion Congress and Exposition
ISSN (Print)2329-3721
ISSN (electronic)2329-3748

Abstract

Hybrid inverter combine conventional silicon switches and wide bandgap switches according to their respective parameters to optimize their usability. Active neutral point clamped inverter can be divided into a high frequency and a low frequency section, making them ideally suited for a hybrid approach. In this paper, a hybrid active neutral point clamped inverter combining silicon IGBTs and GaN transistors is presented. The application of additional decoupling capacitors for the high frequency bridge is shown. Furthermore, a possible combination of Super Junction MOSFETs and silicon IGBTs in the low frequency section to further optimize the design is introduced. To enhance the current range and reduce filter effort, parallel GaN stages with interleaved modulation are used.

Keywords

    ANPC, electric aircraft, GaN, hybrid topology, interleaving

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft. / Fauth, Leon; Beckemeier, Christian; Friebe, Jens.
2021 IEEE Energy Conversion Congress and Exposition (ECCE). Institute of Electrical and Electronics Engineers Inc., 2021. p. 1917-1923 (IEEE Energy Conversion Congress and Exposition).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Fauth, L, Beckemeier, C & Friebe, J 2021, A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft. in 2021 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Energy Conversion Congress and Exposition, Institute of Electrical and Electronics Engineers Inc., pp. 1917-1923, 13th IEEE Energy Conversion Congress and Exposition, ECCE 2021, Virtual, Online, Canada, 10 Oct 2021. https://doi.org/10.1109/ecce47101.2021.9595512
Fauth, L., Beckemeier, C., & Friebe, J. (2021). A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft. In 2021 IEEE Energy Conversion Congress and Exposition (ECCE) (pp. 1917-1923). (IEEE Energy Conversion Congress and Exposition). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ecce47101.2021.9595512
Fauth L, Beckemeier C, Friebe J. A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft. In 2021 IEEE Energy Conversion Congress and Exposition (ECCE). Institute of Electrical and Electronics Engineers Inc. 2021. p. 1917-1923. (IEEE Energy Conversion Congress and Exposition). doi: 10.1109/ecce47101.2021.9595512
Fauth, Leon ; Beckemeier, Christian ; Friebe, Jens. / A Hybrid Active Neutral Point Clamped Converter consisting of Si IGBTs and GaN HEMTs for Auxiliary Systems of Electric Aircraft. 2021 IEEE Energy Conversion Congress and Exposition (ECCE). Institute of Electrical and Electronics Engineers Inc., 2021. pp. 1917-1923 (IEEE Energy Conversion Congress and Exposition).
Download
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abstract = "Hybrid inverter combine conventional silicon switches and wide bandgap switches according to their respective parameters to optimize their usability. Active neutral point clamped inverter can be divided into a high frequency and a low frequency section, making them ideally suited for a hybrid approach. In this paper, a hybrid active neutral point clamped inverter combining silicon IGBTs and GaN transistors is presented. The application of additional decoupling capacitors for the high frequency bridge is shown. Furthermore, a possible combination of Super Junction MOSFETs and silicon IGBTs in the low frequency section to further optimize the design is introduced. To enhance the current range and reduce filter effort, parallel GaN stages with interleaved modulation are used. ",
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