Details
| Original language | English |
|---|---|
| Pages (from-to) | 3877-3881 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
| Volume | 70 |
| Issue number | 10 |
| Publication status | Published - 28 Jun 2023 |
Abstract
This brief presents a frequency doubler (FD) for a microwave-control system intended for an ^171 Yb^+ ion-trap-based quantum computer. The circuit is optimized for frequency multiplication from 11GHz to 13 GHz with a ≥29 dBc fundamental- and third harmonic rejection over the entire frequency range and peak HRR1/HRR3 of 37 dBc/ 39 dBc. This enables the microwave frequency generation to drive the hyperfine transitions in the electronic ground state of an ^171 Yb^+ ion at 12.6 GHz. Cryogenic measurements of the FD down to 4.5 K enable circuit functionality verification for the intended low-temperature operation. Additionally, insights into the cryogenic temperature effects of the employed BiCMOS technology are obtained and used to derive a biasing control methodology for constant performance in the temperature range of 300K to 4.5K. The proposed circuit is silicon-proven and fabricated in a 0.13~ μ m SiGe BiCMOS process, consuming a core area of only 0.034 mm2.
Keywords
- BiCMOS, Freq. doubler, trapped Ion QC
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 70, No. 10, 28.06.2023, p. 3877-3881.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A Cryogenic 12 GHz Frequency Doubler with Temperature Compensation for Trapped-Ion Quantum Computer
AU - Toth, Peter
AU - Meyer, Alexander
AU - Halama, Sebastian
AU - Ishikuro, Hiroki
AU - Issakov, Vadim
N1 - Funding Information: . This work was supported by the German BMBF funded Project QuMIC under Grant 13N15932. This brief was recommended by Associate Editor E. Yao.
PY - 2023/6/28
Y1 - 2023/6/28
N2 - This brief presents a frequency doubler (FD) for a microwave-control system intended for an ^171 Yb^+ ion-trap-based quantum computer. The circuit is optimized for frequency multiplication from 11GHz to 13 GHz with a ≥29 dBc fundamental- and third harmonic rejection over the entire frequency range and peak HRR1/HRR3 of 37 dBc/ 39 dBc. This enables the microwave frequency generation to drive the hyperfine transitions in the electronic ground state of an ^171 Yb^+ ion at 12.6 GHz. Cryogenic measurements of the FD down to 4.5 K enable circuit functionality verification for the intended low-temperature operation. Additionally, insights into the cryogenic temperature effects of the employed BiCMOS technology are obtained and used to derive a biasing control methodology for constant performance in the temperature range of 300K to 4.5K. The proposed circuit is silicon-proven and fabricated in a 0.13~ μ m SiGe BiCMOS process, consuming a core area of only 0.034 mm2.
AB - This brief presents a frequency doubler (FD) for a microwave-control system intended for an ^171 Yb^+ ion-trap-based quantum computer. The circuit is optimized for frequency multiplication from 11GHz to 13 GHz with a ≥29 dBc fundamental- and third harmonic rejection over the entire frequency range and peak HRR1/HRR3 of 37 dBc/ 39 dBc. This enables the microwave frequency generation to drive the hyperfine transitions in the electronic ground state of an ^171 Yb^+ ion at 12.6 GHz. Cryogenic measurements of the FD down to 4.5 K enable circuit functionality verification for the intended low-temperature operation. Additionally, insights into the cryogenic temperature effects of the employed BiCMOS technology are obtained and used to derive a biasing control methodology for constant performance in the temperature range of 300K to 4.5K. The proposed circuit is silicon-proven and fabricated in a 0.13~ μ m SiGe BiCMOS process, consuming a core area of only 0.034 mm2.
KW - BiCMOS
KW - Freq. doubler
KW - trapped Ion QC
UR - http://www.scopus.com/inward/record.url?scp=85163487660&partnerID=8YFLogxK
U2 - 10.1109/TCSII.2023.3290260
DO - 10.1109/TCSII.2023.3290260
M3 - Article
AN - SCOPUS:85163487660
VL - 70
SP - 3877
EP - 3881
JO - IEEE Transactions on Circuits and Systems II: Express Briefs
JF - IEEE Transactions on Circuits and Systems II: Express Briefs
SN - 1549-7747
IS - 10
ER -