A configurable high-side/ low-side driver

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

External Research Organisations

  • Texas Instruments Deutschland GmbH
  • Technical University of Munich (TUM)
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Details

Original languageEnglish
Title of host publicationESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
Pages256-259
Number of pages4
Publication statusPublished - 2007
Externally publishedYes
EventESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Germany
Duration: 11 Sept 200713 Sept 2007

Publication series

NameESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Abstract

A configurable High-Side/Low-Side driver (HSD/LSD) is presented. The operating mode of this driver depends just upon external connection. The circuit incorporates improved protection circuitry using modified Zener diodes. These diodes are isolated, allowing large negative voltages at source and gate of the switch device. Together with an isolated output stage of the driving circuit, this results in high negative source and gate voltages for the HSD configuration, leading to faster switch-off. This integrated solution with fast and similar HSD/LSD switching times combines the advantages of integrated circuits and the discrete solutions that were used for fast switching HSD up to now, as well as the advantages of both HSD and LSD. Experimental results in a 0.35/μm BiCMOS technology show that the gate can drop as low as -28V in the high-side configuration. In the low-side configuration, the drain can rise as high as 45V. In further measurements the configurable driver shows an excellent behaviour both for high-side and low-side in a H-bridge motor driver.

ASJC Scopus subject areas

Cite this

A configurable high-side/ low-side driver. / Wendt, Michael; Thoma, Lenz; Wicht, Bernhard et al.
ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. p. 256-259 4430292 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Wendt, M, Thoma, L, Wicht, B & Schmitt-Landsiedel, D 2007, A configurable high-side/ low-side driver. in ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference., 4430292, ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference, pp. 256-259, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, Munich, Germany, 11 Sept 2007. https://doi.org/10.1109/ESSCIRC.2007.4430292
Wendt, M., Thoma, L., Wicht, B., & Schmitt-Landsiedel, D. (2007). A configurable high-side/ low-side driver. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference (pp. 256-259). Article 4430292 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2007.4430292
Wendt M, Thoma L, Wicht B, Schmitt-Landsiedel D. A configurable high-side/ low-side driver. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. p. 256-259. 4430292. (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). doi: 10.1109/ESSCIRC.2007.4430292
Wendt, Michael ; Thoma, Lenz ; Wicht, Bernhard et al. / A configurable high-side/ low-side driver. ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. pp. 256-259 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).
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title = "A configurable high-side/ low-side driver",
abstract = "A configurable High-Side/Low-Side driver (HSD/LSD) is presented. The operating mode of this driver depends just upon external connection. The circuit incorporates improved protection circuitry using modified Zener diodes. These diodes are isolated, allowing large negative voltages at source and gate of the switch device. Together with an isolated output stage of the driving circuit, this results in high negative source and gate voltages for the HSD configuration, leading to faster switch-off. This integrated solution with fast and similar HSD/LSD switching times combines the advantages of integrated circuits and the discrete solutions that were used for fast switching HSD up to now, as well as the advantages of both HSD and LSD. Experimental results in a 0.35/μm BiCMOS technology show that the gate can drop as low as -28V in the high-side configuration. In the low-side configuration, the drain can rise as high as 45V. In further measurements the configurable driver shows an excellent behaviour both for high-side and low-side in a H-bridge motor driver.",
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N2 - A configurable High-Side/Low-Side driver (HSD/LSD) is presented. The operating mode of this driver depends just upon external connection. The circuit incorporates improved protection circuitry using modified Zener diodes. These diodes are isolated, allowing large negative voltages at source and gate of the switch device. Together with an isolated output stage of the driving circuit, this results in high negative source and gate voltages for the HSD configuration, leading to faster switch-off. This integrated solution with fast and similar HSD/LSD switching times combines the advantages of integrated circuits and the discrete solutions that were used for fast switching HSD up to now, as well as the advantages of both HSD and LSD. Experimental results in a 0.35/μm BiCMOS technology show that the gate can drop as low as -28V in the high-side configuration. In the low-side configuration, the drain can rise as high as 45V. In further measurements the configurable driver shows an excellent behaviour both for high-side and low-side in a H-bridge motor driver.

AB - A configurable High-Side/Low-Side driver (HSD/LSD) is presented. The operating mode of this driver depends just upon external connection. The circuit incorporates improved protection circuitry using modified Zener diodes. These diodes are isolated, allowing large negative voltages at source and gate of the switch device. Together with an isolated output stage of the driving circuit, this results in high negative source and gate voltages for the HSD configuration, leading to faster switch-off. This integrated solution with fast and similar HSD/LSD switching times combines the advantages of integrated circuits and the discrete solutions that were used for fast switching HSD up to now, as well as the advantages of both HSD and LSD. Experimental results in a 0.35/μm BiCMOS technology show that the gate can drop as low as -28V in the high-side configuration. In the low-side configuration, the drain can rise as high as 45V. In further measurements the configurable driver shows an excellent behaviour both for high-side and low-side in a H-bridge motor driver.

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