Details
| Original language | English |
|---|---|
| Article number | 9459503 |
| Pages (from-to) | 13355-13359 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 36 |
| Issue number | 12 |
| Publication status | Published - Dec 2021 |
Abstract
Degradation caused by humidity affects the blocking characteristic of an insulated gate bipolar transistor (IGBT) module, leading to an increased leakage current and/or a reduced voltage blocking capability. The proposed measurement system enables the in situ detection of decreased breakdown voltage and increased leakage current. Thus, it can assess the degradation level of power modules when installed in a converter. This test is intended primarily for wind power converters and can be part of the start-up procedure of the system. The working principle has been validated on predamaged power modules arranged in half-bridge configuration, using a demonstrator implementation of the proposed approach in laboratory experiments. Due to the simplicity of the circuit, this concept is easy to integrate in existing inverter systems at a comparatively low cost.
Keywords
- Breakdown voltage, condition monitoring, degradation, humidity, insulated gate bipolar transistors, leakage currents, preventive maintenance, semiconductor device measurement, voltage measurement
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Transactions on Power Electronics, Vol. 36, No. 12, 9459503, 12.2021, p. 13355-13359.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A Concept for Detection of Humidity-Driven Degradation of IGBT Modules
AU - Kostka, Benedikt
AU - Herwig, Daniel
AU - Hanf, Michael
AU - Zorn, Christian
AU - Mertens, Axel
N1 - Funding Information: This work was supported by the Federal Ministry for Economic Affairs and Energy of the German Government under Grant 0324336 C/E.
PY - 2021/12
Y1 - 2021/12
N2 - Degradation caused by humidity affects the blocking characteristic of an insulated gate bipolar transistor (IGBT) module, leading to an increased leakage current and/or a reduced voltage blocking capability. The proposed measurement system enables the in situ detection of decreased breakdown voltage and increased leakage current. Thus, it can assess the degradation level of power modules when installed in a converter. This test is intended primarily for wind power converters and can be part of the start-up procedure of the system. The working principle has been validated on predamaged power modules arranged in half-bridge configuration, using a demonstrator implementation of the proposed approach in laboratory experiments. Due to the simplicity of the circuit, this concept is easy to integrate in existing inverter systems at a comparatively low cost.
AB - Degradation caused by humidity affects the blocking characteristic of an insulated gate bipolar transistor (IGBT) module, leading to an increased leakage current and/or a reduced voltage blocking capability. The proposed measurement system enables the in situ detection of decreased breakdown voltage and increased leakage current. Thus, it can assess the degradation level of power modules when installed in a converter. This test is intended primarily for wind power converters and can be part of the start-up procedure of the system. The working principle has been validated on predamaged power modules arranged in half-bridge configuration, using a demonstrator implementation of the proposed approach in laboratory experiments. Due to the simplicity of the circuit, this concept is easy to integrate in existing inverter systems at a comparatively low cost.
KW - Breakdown voltage
KW - condition monitoring
KW - degradation
KW - humidity
KW - insulated gate bipolar transistors
KW - leakage currents
KW - preventive maintenance
KW - semiconductor device measurement
KW - voltage measurement
UR - http://www.scopus.com/inward/record.url?scp=85113411307&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2021.3090149
DO - 10.1109/TPEL.2021.3090149
M3 - Article
AN - SCOPUS:85113411307
VL - 36
SP - 13355
EP - 13359
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
SN - 0885-8993
IS - 12
M1 - 9459503
ER -