Details
| Original language | English |
|---|---|
| Pages (from-to) | 207-210 |
| Number of pages | 4 |
| Journal | IEEE Solid-State Circuits Letters |
| Volume | 7 |
| Early online date | 7 Jun 2024 |
| Publication status | Published - 7 Jun 2024 |
Abstract
Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.
Keywords
- GaN, Gallium nitride, Gate drivers, High-voltage techniques, Logic gates, Protection, Resistors, Switches, gate driver, high-voltage level shifter, integration, monolithic, off-line power conversion, Gallium nitride (GaN)
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: IEEE Solid-State Circuits Letters, Vol. 7, 07.06.2024, p. 207-210.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A 500V, 6.25MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies
AU - Deneke, Niklas
AU - Wicht, Bernhard
N1 - Publisher Copyright: © 2018 IEEE.
PY - 2024/6/7
Y1 - 2024/6/7
N2 - Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.
AB - Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.
KW - GaN
KW - Gallium nitride
KW - Gate drivers
KW - High-voltage techniques
KW - Logic gates
KW - Protection
KW - Resistors
KW - Switches
KW - gate driver
KW - high-voltage level shifter
KW - integration
KW - monolithic
KW - off-line power conversion
KW - Gallium nitride (GaN)
UR - http://www.scopus.com/inward/record.url?scp=85195425536&partnerID=8YFLogxK
U2 - 10.1109/lssc.2024.3411390
DO - 10.1109/lssc.2024.3411390
M3 - Article
VL - 7
SP - 207
EP - 210
JO - IEEE Solid-State Circuits Letters
JF - IEEE Solid-State Circuits Letters
SN - 2573-9603
ER -