Details
| Original language | English |
|---|---|
| Pages (from-to) | 1 |
| Number of pages | 1 |
| Journal | IEEE Solid-State Circuits Letters |
| Publication status | E-pub ahead of print - 2024 |
Abstract
Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This work presents a monolithic GaN-IC including a half-bridge formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500V switching at 6.25MHz and is thus well suited for off-line power supplies.
Keywords
- GaN, Gallium nitride, Gate drivers, High-voltage techniques, Logic gates, Protection, Resistors, Switches, gate driver, high-voltage level shifter, integration, monolithic, off-line power conversion
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE Solid-State Circuits Letters, 2024, p. 1.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A 500V, 6.25MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies
AU - Deneke, Niklas
AU - Wicht, Bernhard
N1 - Publisher Copyright: IEEE
PY - 2024
Y1 - 2024
N2 - Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This work presents a monolithic GaN-IC including a half-bridge formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500V switching at 6.25MHz and is thus well suited for off-line power supplies.
AB - Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This work presents a monolithic GaN-IC including a half-bridge formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500V switching at 6.25MHz and is thus well suited for off-line power supplies.
KW - GaN
KW - Gallium nitride
KW - Gate drivers
KW - High-voltage techniques
KW - Logic gates
KW - Protection
KW - Resistors
KW - Switches
KW - gate driver
KW - high-voltage level shifter
KW - integration
KW - monolithic
KW - off-line power conversion
UR - http://www.scopus.com/inward/record.url?scp=85195425536&partnerID=8YFLogxK
U2 - 10.1109/lssc.2024.3411390
DO - 10.1109/lssc.2024.3411390
M3 - Article
SP - 1
JO - IEEE Solid-State Circuits Letters
JF - IEEE Solid-State Circuits Letters
ER -